- 框圖
- Design considerations
- Design resources
- Product listing
- 支持
框圖
Highlighted components are Nexperia focus products.
Power interface
Power management
推薦產(chǎn)品 (8)
- Ideal diode: 1.2-5.5 V, 1.5 A
- LDO regulators (greater than 30 V)
- Load switches: 5.5 V, 55 mΩ, up to 2.5 A
- Low-noise transformer driver: 1.2 A
- Low VCEsat (BISS) power transistors: LFPAK56
- MOSFETs: N-channel, 40-80 V, RDSon < 10 mΩ, LFPAK/MLPAK
- MOSFETs: P-channel, > 30 V, MLPAK / LFPAK
- Schottky diode: Trench , 40-100 V, CFP2-HP/CFP3-HP/CFP5
Communications interface
Signal processing
Gate driver
Motor drive MOSFETs
推薦產(chǎn)品 (1)
Battery isolation
推薦產(chǎn)品 (1)
Motor isolation
推薦產(chǎn)品 (1)
選擇元件
想要查看本應用中，所使用的 Nexperia 元件的更多信息，請選擇上面的元件或單擊框圖中的元件（藍色突出顯示的部分）。
Design considerations
- Input protection from reverse battery connection is achieved by ideal diode controllers
- Dual-redundancy designs require greater power densities and space saving, enabled by LFPAK56/56E package
- Safe and reliable switching of the MOSFETs is provided by integrated gate drivers
- Integrated converters provide turn-key solution for voltage conversion
- Efficient and smooth switching can be achieved with Schottky diodes in trench technology
- Further space saving, better thermal performance and automatic optical inspection are some of the advantages of small signal discrete and logic components in new DFN and CFP packages
- Signal voltage level differences between design sections can adjusted by bidirectional (NXB family for signal edge acceleration) and unidirectional (NXU family for signal integrity improvement) translators
Design resources
Product listing
Power interface
Power management
- Ideal diode: 1.2-5.5 V, 1.5 A
- LDO regulators (greater than 30 V)
- Load switches: 5.5 V, 55 mΩ, up to 2.5 A
- Low-noise transformer driver: 1.2 A
- Low VCEsat (BISS) power transistors: LFPAK56
- MOSFETs: N-channel, 40-80 V, RDSon < 10 mΩ, LFPAK/MLPAK
- MOSFETs: P-channel, > 30 V, MLPAK / LFPAK
- Schottky diode: Trench , 40-100 V, CFP2-HP/CFP3-HP/CFP5