74AUP1G00-Q100
Low-power 2-input NAND gate
The 74AUP1G00-Q100 is a single 2-input NAND gate. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range from 0.8 V to 3.6 V
CMOS low power dissipation
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 Vto 2.7 V)
JESD8C (2.7 V to 3.6 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Low static power consumption; ICC = 0.9 μA (maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Overvoltage tolerant inputs to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
參數(shù)類型
| 型號(hào) | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 74AUP1G00GW-Q100 | 0.8?-?3.6 | CMOS | ± 1.9 | 8.3 | 70 | 1 | ultra low | -40~125 | 309 | 79.2 | 179 | TSSOP5 |
| 74AUP1G00GZ-Q100 | 0.8?-?3.6 | CMOS | ultra low | -40~125 | XSON5 |
封裝
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74AUP1G00GW-Q100 | 74AUP1G00GW‑Q100H (935690852125) |
Active | pA |
TSSOP5 (SOT353-1) |
SOT353-1 |
WAVE_BG-BD-1
|
SOT353-1_125 |
| 74AUP1G00GZ-Q100 | 74AUP1G00GZ‑Q100YL (935691715315) |
Active | pA |
XSON5 (SOT8065-1) |
SOT8065-1 | SOT8065-1_315 |
環(huán)境信息
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74AUP1G00GW-Q100 | 74AUP1G00GW‑Q100H | 74AUP1G00GW-Q100 |
|
|
| 74AUP1G00GZ-Q100 | 74AUP1G00GZ‑Q100YL | 74AUP1G00GZ-Q100 |
|
|
文檔 (13)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74AUP1G00_Q100 | Low-power 2-input NAND gate | Data sheet | 2023-07-11 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
| SOT353-1 | 3D model for products with SOT353-1 package | Design support | 2019-09-23 |
| SOT8065-1 | 3D model for products with SOT8065-1 package | Design support | 2024-11-05 |
| aup1g00 | 74AUP1G00 IBIS model | IBIS model | 2014-12-04 |
| Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Leaflet | 2019-04-12 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| Leaflet_SOT8065_Minilogic | Leaflet_SOT8065 Minilogic | Leaflet | 2024-11-15 |
| TSSOP5_SOT353-1_mk | plastic, thin shrink small outline package; 5 leads; 0.65 mm pitch; 2 mm x 1.25 mm x 0.95 mm body | Marcom graphics | 2018-07-25 |
| SOT353-1 | plastic thin shrink small outline package; 5 leads; body width 1.25 mm | Package information | 2022-11-15 |
| SOT8065-1 | Plastic thermal enhanced extremely thin small outline package withside-wettable flanks (SWF); no leads; 5 terminals; body 1.1 × 0.85 × 0.5mm | Package information | 2024-08-28 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
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