Nexperia offers a "no compromise" parameter selection. Until now power engineers have had to choose between competing MOSFET capabilities, such as low RDS(on) vs. low QG(tot), or fast-switching vs. low spiking, ultimately leading to products that are compromised in terms of efficiency, size, and cost. NextPowerS3 is not the case. Managing to achieve a balance between all key parameters.
The NextPowerS3 family spans across the LFPAK package range, housed in LFPAK33 (SOT1210), LFPAK56 (SOT669), LFPAK56E (SOT1023) and LFPAK88 (SOT1235). The LFPAK packages are completely free of wirebonds, meaning they deliver a competitive RDS(on) (industry best in 25 V) as well as low Rth, low inductance and excellent board level reliability.
Suitable for a wide range of applications including high-efficiency power supplies for telecoms and cloud computing: Or-ing, hotswap, synchronous rectification, motor control and battery protection.
主要特性和優(yōu)勢
Features and benefits
- Balanced RDS(on) and QG for class leading efficiency
- Low RDS(on) (0.57 m? in LFPAK56)
- Unique Schottky-Plus technology delivers low spiking without compromising efficiency or IDSS leakage
- High reliability LFPAK packages: copper clip, solder die attach and qualified to 175 °C.
- 380 A continuous current demonstrated
- Very strong SOA
Video: The importance of SOA
Parametric search
NextPowerS3 MOSFETs
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Products
MOSFETs
| 型號 | 描述 | 狀態(tài) | 快速訪問 |
|---|---|---|---|
| PSMN014-40HLD | N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology | Production | |
| PSMN0R7-25YLD | N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN0R9-25YLD | N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN0R9-30YLD | N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R0-25YLD | N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R0-30YLD | N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R0-40SSH | N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
| PSMN1R0-40YLD | N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN1R0-40YSH | N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN1R2-25YLD | N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R2-30YLD | N-channel 30 V, 1.2 mΩ, 250 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R4-30YLD | N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R4-40YLD | N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology | Production | |
| PSMN1R4-40YSH | N-channel 40 V, 1.4 mOhm, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | EndOfLife | |
| PSMN1R5-25MLH | N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology | Production | |
| PSMN1R5-40YSD | N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN1R6-30MLH | N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology | Production | |
| PSMN1R7-25YLD | N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R7-40YLB | N-channel 40 V, 1.8 mOhm, 200 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
| PSMN1R7-40YLD | N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN1R8-30MLH | N-channel 30 V, 2.1 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology | Production | |
| PSMN1R9-40YSB | N-channel 40 V, 1.9 mOhm, 200 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
| PSMN1R9-40YSD | N-channel 40 V, 1.9 mΩ, 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN2R0-25MLD | N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN2R0-25YLD | N-channel 25 V, 2.09 mΩ, 179 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN2R0-40YLB | N-channel 40 V, 2.1 mOhm, 180 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
| PSMN2R0-40YLD | N-channel 40 V, 2.1 mΩ, 180 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN2R2-40YSB | N-channel 40 V, 2.2 mOhm, 180 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
| PSMN2R2-40YSD | N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN2R4-30MLD | N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN2R4-30YLD | N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN2R5-40YLB | N-channel 40 V, 2.6 mOhm, 160 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
| PSMN2R5-40YLD | N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN2R8-40YSB | N-channel 40 V, 2.8 mOhm, 160 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
| PSMN2R8-40YSD | N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN3R0-30YLD | N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN3R2-40YLB | N-channel 40 V, 3.3 mOhm, 120 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
| PSMN3R2-40YLD | N-channel 40 V, 3.3 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN3R5-25MLD | N-channel 25 V, 3.72 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN3R5-40YSB | N-channel 40 V, 3.5 mOhm, 120 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
| PSMN3R5-40YSD | N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN4R0-30YLD | N-channel 30 V, 4.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN4R2-30MLD | N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN5R3-25MLD | N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN5R4-25YLD | N-channel 25 V, 5.69 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN6R0-25YLD | N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN6R0-30YLD | N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN6R1-25MLD | N-channel 25 V, 6.8 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN6R1-30YLD | N-channel 30 V, 6.1 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN7R5-30MLD | N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN7R5-30YLD | N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMNR51-25YLH | N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology | Production | |
| PSMNR58-30YLH | N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology | Production | |
| PSMNR60-25YLH | N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology | Production | |
| PSMNR70-30YLH | N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology | Production | |
| PSMNR70-40SSH | N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
| PSMNR90-40YLH | N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology | Production |
Documentation
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| vp_1381307205778_zh_CN.zip | 恩智浦的NextPowerS3 MOSFET——帶軟恢復(fù)功能的超快速開關(guān)性能 | Value proposition | 2017-03-04 |
| NextPowerS3_cleaner_image.png | NextPowerS3 cleaner image | Marcom graphics | 2020-01-23 |
| vp_1381307205778.zip | NextPowerS3 MOSFETs | Value proposition | 2021-06-11 |
| AN50014.pdf | Understanding the MOSFET peak drain current rating | Application note | 2025-09-08 |
| AN90016.pdf | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2025-09-08 |
| AN11160.pdf | Designing RC Snubbers | Application note | 2025-09-10 |
| AN11261.pdf | RC Thermal Models | Application note | 2025-09-10 |
| AN90011.pdf | Half-bridge MOSFET switching and its impact on EMC | Application note | 2025-09-10 |
| AN90003.pdf | LFPAK MOSFET thermal design guide | Application note | 2025-09-30 |
| AN11158.pdf | Understanding power MOSFET data sheet parameters | Application note | 2025-10-21 |
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