外形圖
| 封裝版本 | 封裝名稱 | 封裝說明 | 參考 | 發(fā)行日期 |
|---|---|---|---|---|
| SOT883 | DFN1006-3 | plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body | SC-101 (EIAJ) | 2003-04-03 |
相關文檔
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT883 | 3D model for products with SOT883 package | Design support | 2020-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN1006-3_SOT883_mk | plastic, leadless ultra small package; 3 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body | Marcom graphics | 2017-01-28 |
| SOT883 | plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body | Package information | 2022-05-20 |
| SOT883_305 | DFN1006-3; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2020-04-21 |
| SOT883_315 | DFN1006-3; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2021-01-27 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
采用此封裝的產(chǎn)品
Automotive qualified products (AEC-Q100/Q101)
| 型號 | 描述 | 快速訪問 |
|---|---|---|
| 2N7002AKM-Q | 60 V, N-channel Trench MOSFET | |
| BAT17 | Schottky barrier diode | |
| BAT54CM-Q | Schottky barrier dual diode | |
| BAV70M-Q | High-speed switching diode | |
| BAW56M-Q | High-speed switching diode | |
| BC846BM | 65 V, 100 mA NPN general-purpose transistor | |
| BC847AM | 45 V, 100 mA NPN general-purpose transistor | |
| BC847BM | 45 V, 100 mA NPN general-purpose transistor | |
| BC847CM | 45 V, 100 mA NPN general-purpose transistor | |
| BC856BM | 60 V, 100 mA PNP general-purpose transistor | |
| BC857AM | 45 V, 100 mA PNP general-purpose transistor | |
| BC857BM | 45 V, 100 mA PNP general-purpose transistor | |
| BC857CM | 45 V, 100 mA PNP general-purpose transistor | |
| BSS84AKM | 50 V, 230 mA P-channel Trench MOSFET | |
| BSS138AKM-Q | 60 V, N-channel Trench MOSFET | |
| PBSS3540M | 40 V, 0.5 A PNP low VCEsat (BISS) transistor | |
| PESD3V3L2UM | Low capacitance double ESD protection diode | |
| PESD5V0L2UM | Low capacitance double ESD protection diode | |
| PESD5V0U2BM-Q | Ultra low capacitance bidirectional double ESD protection array | |
| PESD5V0V2BM | Very low capacitance bidirectional ESD protection diodes | |
| PESD5V0X2UAM-Q | Ultra low capacitance unidirectional double ESD protection diode | |
| PESD5V0X2UM-Q | Ultra low capacitance unidirectional double ESD protection diode | |
| PMBT2907AM | 60 V, 600 mA PNP switching transistor | |
| PMBT3906M | 40 V, 200 mA PNP switching transistor | |
| BAV170M-Q | Dual common cathode low-leakage diode | |
| PBSS2540M-Q | 40 V, 0.5 A NPN low VCEsat transistor | |
| 2PC4617RM | NPN general purpose transistor | |
| PDTA123JM | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ | |
| PDTA113EM | PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm | |
| PDTA123EM | PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ | |
| PDTA114TM | PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open | |
| PDTA115TM | PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open | |
| PDTC144VM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1?=?47?kΩ,?R2?=?10?kΩ | |
| PDTA113ZM-Q | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm | |
| PDTA114YM | PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ | |
| PDTA143XM-Q | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ | |
| PDTA144EM-Q | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ | |
| PDTC123JM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ | |
| PDTA124EM-Q | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ | |
| PDTC114YM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ | |
| PDTC144WM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ | |
| PDTC114EM-Q | 50 V, 100 mA NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ | |
| PDTC143TM-Q | 50 V, 100 mA NPN resistor-equipped transistor;?R1?=?4.7?kΩ,?R2?=?open | |
| PDTA123YM-Q | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ | |
| PDTC123EM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ | |
| PDTC144TM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open | |
| PDTC124TM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open | |
| PDTC143ZM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ | |
| PDTC144EM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ | |
| PDTA114EM | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ | |
| PDTC123YM-Q | NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm | |
| PDTC124XM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ | |
| PDTC143EM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1?=?4.7?kΩ,?R2?=?4.7 ?kΩ | |
| PDTC143XM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1?=?4.7?kΩ,?R2?=?10 kΩ | |
| PDTC123TM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1?=?2.2?kΩ,?R2?=?open |
Bipolar transistors
| 型號 | 描述 | 快速訪問 |
|---|---|---|
| BC846BM | 65 V, 100 mA NPN general-purpose transistor | |
| BC847AM | 45 V, 100 mA NPN general-purpose transistor | |
| BC847BM | 45 V, 100 mA NPN general-purpose transistor | |
| BC847CM | 45 V, 100 mA NPN general-purpose transistor | |
| BC856BM | 60 V, 100 mA PNP general-purpose transistor | |
| BC857AM | 45 V, 100 mA PNP general-purpose transistor | |
| BC857BM | 45 V, 100 mA PNP general-purpose transistor | |
| BC857CM | 45 V, 100 mA PNP general-purpose transistor | |
| PBSS3540M | 40 V, 0.5 A PNP low VCEsat (BISS) transistor | |
| PMBT2222AM | 40 V, 600 mA NPN switching transistor | |
| PMBT2907AM | 60 V, 600 mA PNP switching transistor | |
| PMBT3904M | 40 V, 200 mA NPN switching transistor | |
| PMBT3906M | 40 V, 200 mA PNP switching transistor | |
| PBSS2540M-Q | 40 V, 0.5 A NPN low VCEsat transistor | |
| PBSS2540M | 40 V, 0.5 A NPN low VCEsat transistor | |
| 2PC4617RM | NPN general purpose transistor | |
| PDTA123JM | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ | |
| PDTA124XM | PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ | |
| PDTA113EM | PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm | |
| PDTA124TM | PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open | |
| PDTA123EM | PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ | |
| PDTA144WM | PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm | |
| PDTA144VM | PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm | |
| PDTA114TM | PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open | |
| PDTA115TM | PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open | |
| PDTA123TM | PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open | |
| PDTA115EM | PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ | |
| PDTA143XM | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ | |
| PDTA144TM | PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open | |
| PDTC123JM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ | |
| PDTA143TM | PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open | |
| PDTC143EM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ | |
| PDTC144VM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ | |
| PDTC144VM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1?=?47?kΩ,?R2?=?10?kΩ | |
| PDTA113ZM-Q | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm | |
| PDTA114YM | PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ | |
| PDTA143XM-Q | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ | |
| PDTA144EM-Q | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ | |
| PDTC123JM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ | |
| PDTA144EM | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ | |
| PDTC114EM | 50 V, 100 mA NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ | |
| PDTC115EM | 50 V, 20 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ | |
| PDTC144WM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ | |
| PDTA124EM | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ | |
| PDTA124EM-Q | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ | |
| PDTA113ZM | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm | |
| PDTC114YM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ | |
| PDTC123YM | NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm | |
| PDTC144WM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ | |
| PDTC114EM-Q | 50 V, 100 mA NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ | |
| PDTC114YM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ | |
| PDTC143TM-Q | 50 V, 100 mA NPN resistor-equipped transistor;?R1?=?4.7?kΩ,?R2?=?open | |
| PDTC143XM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ | |
| PDTA143EM | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ | |
| PDTA143ZM | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ | |
| PDTC123EM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ | |
| PDTA123YM | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ | |
| PDTC123TM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open | |
| PDTA123YM-Q | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ | |
| PDTC123EM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ | |
| PDTC143ZM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ | |
| PDTC144TM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open | |
| PDTC124TM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open | |
| PDTC143ZM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ | |
| PDTC144EM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ | |
| PDTA114EM | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ | |
| PDTC123YM-Q | NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm | |
| PDTC124XM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ | |
| PDTC124XM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ | |
| PDTC144EM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ | |
| PDTC114TM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open | |
| PDTC143EM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1?=?4.7?kΩ,?R2?=?4.7 ?kΩ | |
| PDTC143XM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1?=?4.7?kΩ,?R2?=?10 kΩ | |
| PDTC143TM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open | |
| PDTC123TM-Q | 50 V, 100 mA NPN resistor-equipped transistor; R1?=?2.2?kΩ,?R2?=?open | |
| PDTC115TM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open | |
| PDTC124EM | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ |
Diodes
| 型號 | 描述 | 快速訪問 |
|---|---|---|
| BAT17 | Schottky barrier diode | |
| BAT54CM-Q | Schottky barrier dual diode | |
| BAT54CM | Schottky barrier dual diode | |
| BAV70M-Q | High-speed switching diode | |
| BAV70M | High-speed switching diode | |
| BAW56M-Q | High-speed switching diode | |
| BAV170M-Q | Dual common cathode low-leakage diode | |
| BAV170M | Dual common cathode low-leakage diode |
ESD protection, TVS, filtering and signal conditioning
| 型號 | 描述 | 快速訪問 |
|---|---|---|
| PESD3V3L2UM | Low capacitance double ESD protection diode | |
| PESD5V0L2UM | Low capacitance double ESD protection diode | |
| PESD5V0U2BM-Q | Ultra low capacitance bidirectional double ESD protection array | |
| PESD5V0U2BM | Ultra low capacitance bidirectional double ESD protection array | |
| PESD5V0V2BM | Very low capacitance bidirectional ESD protection diodes | |
| PESD5V0X2UAM-Q | Ultra low capacitance unidirectional double ESD protection diode | |
| PESD5V0X2UM-Q | Ultra low capacitance unidirectional double ESD protection diode | |
| PESD5V0X2UAM | Ultra low capacitance unidirectional double ESD protection diode | |
| PESD5V0X2UM | Ultra low capacitance unidirectional double ESD protection diode |
MOSFETs
| 型號 | 描述 | 快速訪問 |
|---|---|---|
| 2N7002AKM-Q | 60 V, N-channel Trench MOSFET | |
| BSS84AKM | 50 V, 230 mA P-channel Trench MOSFET | |
| BSS138AKM-Q | 60 V, N-channel Trench MOSFET | |
| NX5008NBKM | 50 V, N-channel Trench MOSFET | |
| PMZ1200UPE | 30 V, P-channel Trench MOSFET | |
| PMZ200UNE | 30 V, N-channel Trench MOSFET | |
| PMZ130UNE | 20 V, N-channel Trench MOSFET | |
| PMZ600UNE | 20 V, N-channel Trench MOSFET | |
| PMZ950UPE | 20 V, P-channel Trench MOSFET | |
| PMZ600UNEL | 20 V, N-channel Trench MOSFET | |
| PMZ550UNE | 30 V, N-channel Trench MOSFET | |
| PMZ950UPEL | 20 V, P-channel Trench MOSFET | |
| PMZ350UPE | 20 V, P-channel Trench MOSFET | |
| PMZ320UPE | 30 V, P-channel Trench MOSFET | |
| PMZ290UNE2 | 20 V, N-channel Trench MOSFET | |
| PMZ390UNE | 30 V, N-channel Trench MOSFET | |
| NX138AKM | 60 V, N-channel Trench MOSFET | |
| NX7002BKM | 60 V, N-channel Trench MOSFET | |
| NX138BKM | 60 V, N-channel Trench MOSFET | |
| PMZ220VPE | 12 V, P-channel Trench MOSFET | |
| PMZ170VNE | 12 V, N-channel Trench MOSFET |