可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| NSF060120T2A0 | NSF060120T2A0J | 934668905118 | SOT8107-2 | 訂單產(chǎn)品 |
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Click here for more informationNSF060120T2A0
1200 V, 60 mOhm, N-channel SiC MOSFET for automotive applications
The NSF060120T2A0 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage industrial applications, such as E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
Features and benefits
Excellent RDSon temperature stability
Very low switching losses
Fast reverse recovery
Fast switching speed
Temperature independent turn-off switching losses
Very fast and robust intrinsic body diode
Faster commutation and improved switching due to the additional Kelvin source pin
Applications
E-vehicle charging infrastructure
Photovoltaic inverters
Switch mode power supply
Uninterruptable power supply
Motor drives
參數(shù)類(lèi)型
| 型號(hào) | Product status | Qualification | Drain-source breakdown voltage (V) | Drain-source on-state resistance at 15 V (mΩ) | Drain-source on-state resistance at 18 V (mΩ) | ID [max] (A) | Rth(j-c) [typ] (K/W) | Package name | QG(tot) [typ] (nC) | Tj [max] (°C) |
|---|---|---|---|---|---|---|---|---|---|---|
| NSF060120T2A0 | Production | Industrial | 1200 | 80 | 60 | 36 | 0.7 | X.PAK | 57 | 175 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| NSF060120T2A0 | NSF060120T2A0J (934668905118) |
Active | NSF060120T2A0 |
X.PAK (SOT8107-2) |
SOT8107-2 | 暫無(wú)信息 |
Boards
| Part number | Description | Type | Quick links | Shop link |
|---|---|---|---|---|
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描述 The evaluation board NEVB-NSF-XPAK-A consists of two half-bridges that enables the basic study of the dynamic characteristics of X.PAK devices in single and parallel operation. The board is optimized for low inductance and features a high bandwidth current shunt that can be used to evaluate the switching performance with maximum precision.
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類(lèi)型 Evaluation board
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Quick links
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Shop link
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環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| NSF060120T2A0 | NSF060120T2A0J | NSF060120T2A0 |
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文檔 (7)
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| NSF060120T2A0 | 1200 V, 60 mΩ, N-channel SiC MOSFET | Data sheet | 2025-03-24 |
| AN90067 | X.PAK SiC MOSFETs: A Technical Guide | Application note | 2025-09-17 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| AN90067 | X.PAK SiC MOSFETs: A Technical Guide | Application note | 2025-09-17 |
| SOT8107-2 | Plastic, surface-mounted Top Side Cooling (TSC) Package;1.27 mm pitch; 14.0 mm x 11.8 mm x 3.5 mm body | Package information | 2025-03-24 |
| NSF060120T2A0_model_LTspice_V1_0 | NSF060120T2A0 LTspice model | SPICE model | 2025-03-18 |
| UM90031 | A guide to using Nexperia SiC MOSFET LTspice models | User manual | 2025-10-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| NSF060120T2A0_model_LTspice_V1_0 | NSF060120T2A0 LTspice model | SPICE model | 2025-03-18 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| NSF060120T2A0 | NSF060120T2A0J | 934668905118 | Active | 暫無(wú)信息 | 800 |
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樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.