可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| 74HCT2G34GW-Q100 | 74HCT2G34GW-Q100H | 935301184125 | SOT363-2 | 訂單產(chǎn)品 |
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Click here for more information74HCT2G34GW-Q100
Dual buffer gate
The 74HC2G34-Q100; 74HCT2G34-Q100 is a dual buffer. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range from 2.0 V to 6.0 V
High noise immunity
CMOS low power dissipation
Balanced propagation delays
Unlimited input rise and fall times
Input levels:
For 74HC2G34-Q100: CMOS level
For 74HCT2G34-Q100: TTL level
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
Complies with JEDEC standards
JESD8C (2.7 V to 3.6 V)
JESD7A (2.0 V to 6.0 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
參數(shù)類型
| 型號(hào) | VCC (V) | Logic switching levels | Output drive capability (mA) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|---|
| 74HCT2G34GW‑Q100 | 4.5?-?5.5 | TTL | ± 4 | 32 | 2 | low | -40~125 | 275 | 48.5 | 163 | TSSOP6 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
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封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74HCT2G34GW‑Q100 | 74HCT2G34GW‑Q100H (935301184125) |
Active | UA |
TSSOP6 (SOT363-2) |
SOT363-2 | SOT363-2_125 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74HCT2G34GW‑Q100 | 74HCT2G34GW‑Q100H | 74HCT2G34GW-Q100 |
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文檔 (8)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74HC_HCT2G34_Q100 | Dual buffer gate | Data sheet | 2023-12-04 |
| AN10161 | PicoGate Logic footprints | Application note | 2002-10-29 |
| AN11044 | Pin FMEA 74HC/74HCT family | Application note | 2019-01-09 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT363-2 | 3D model for products with SOT363-2 package | Design support | 2023-02-02 |
| SOT363-2 | plastic thin shrink small outline package; 6 leads; body width 1.25 mm | Package information | 2022-11-21 |
| SOT363-2_125 | TSSOP6 ; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2022-11-04 |
| 74HCT2G34GW-Q100_Nexperia_Product_Reliability | 74HCT2G34GW-Q100 Nexperia Product Reliability | Quality document | 2025-03-20 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT363-2 | 3D model for products with SOT363-2 package | Design support | 2023-02-02 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
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訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| 74HCT2G34GW‑Q100 | 74HCT2G34GW‑Q100H | 935301184125 | Active | SOT363-2_125 | 3,000 |
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樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.