可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| 74LVT241BQ | 74LVT241BQ,115 | 935285601115 | SOT764-1 | 訂單產(chǎn)品 |
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Click here for more information74LVT241BQ
3.3 V octal buffer/line driver; 3-state
The 74LVT241 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.
This device is an octal buffer that is ideal for driving bus lines. The device features two output enables (1OE, 2OE), each controlling four of the 3-state outputs.
Features and benefits
3-state buffers
Octal bus interface
Input and output interface capability to systems at 5 V supply
TTL input and output switching levels
Output capability: +64 mA/-32 mA
Latch-up protection exceeds 500 mA per JESD78 class II level A
Bus-hold data inputs eliminate the need for external pull-up resistors for unused inputs
Live insertion/extraction permitted
Power-up 3-state
No bus current loading when output is tied to 5 V bus
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +85 °C
參數(shù)類型
| 型號(hào) | VCC (V) | Logic switching levels | Output drive capability (mA) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|
| 74LVT241BQ | 2.7?-?3.6 | TTL | -32 / +64 | 150 | 8 | medium | -40~85 | 77 | 48 | DHVQFN20 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
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封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74LVT241BQ | 74LVT241BQ,115 (935285601115) |
Active | LVT241BQ |
DHVQFN20 (SOT764-1) |
SOT764-1 | SOT764-1_115 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74LVT241BQ | 74LVT241BQ,115 | 74LVT241BQ |
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文檔 (10)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74LVT241 | 3.3 V octal buffer/line driver; 3-state | Data sheet | 2024-07-08 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT764-1 | 3D model for products with SOT764-1 package | Design support | 2019-10-03 |
| lvt241 | lvt241 IBIS model | IBIS model | 2013-04-09 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DHVQFN20_SOT764-1_mk | plastic, dual in-line compatible thermal enhanced very thin quad flat package; 20 terminals; 0.5 mm pitch; 2.5 mm x 4.5 mm x 0.85 mm body | Marcom graphics | 2017-01-28 |
| SOT764-1 | plastic, leadless dual in-line compatible thermal enhanced very thin quad flat package; 20 terminals; 0.5 mm pitch; 4.5 mm x 2.5 mm x 1 mm body | Package information | 2022-06-21 |
| SOT764-1_115 | DHVQFN20; Reel pack for SMD, 7''; Q1/T1 product orientation | Packing information | 2025-10-24 |
| 74LVT241BQ_Nexperia_Product_Reliability | 74LVT241BQ Nexperia Product Reliability | Quality document | 2025-03-20 |
| lvt | lvt Spice model | SPICE model | 2013-05-07 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
PCB Symbol, Footprint and 3D Model
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訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| 74LVT241BQ | 74LVT241BQ,115 | 935285601115 | Active | SOT764-1_115 | 3,000 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.