可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| 74VHC245BQ | 74VHC245BQ,115 | 935289581115 | SOT764-1 | 訂單產(chǎn)品 |
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Click here for more information74VHC245BQ
Octal bus transceiver; 3-state
The 74VHC245; 74VHCT245 are high-speed Si-gate CMOS devices.
The 74VHC245; 74VHCT245 are octal transceivers featuring non-inverting 3-state bus compatible outputs in both send and receive directions.
The 74VHC245; 74VHCT245 feature an output enable input (OE), for easy cascading, and a send and receive direction control input (DIR).
OE controls the outputs so that the buses are effectively isolated.
Features and benefits
Balanced propagation delays
All inputs have Schmitt-trigger action
Inputs accept voltages higher than VCC
- Input levels:
The 74VHC245 operates with CMOS input level
The 74VHCT245 operates with TTL input level
- ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
參數(shù)類(lèi)型
| 型號(hào) | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | fmax (MHz) | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 74VHC245BQ | n.a. | n.a. | CMOS | ± 8 | 3.5 | 8 | 60 | low | -40~125 | 75 | 47 | DHVQFN20 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
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封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74VHC245BQ | 74VHC245BQ,115 (935289581115) |
Active | VHC245 |
DHVQFN20 (SOT764-1) |
SOT764-1 | SOT764-1_115 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74VHC245BQ | 74VHC245BQ,115 | 74VHC245BQ |
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Series
文檔 (9)
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| 74VHC_VHCT245 | Octal bus transceiver; 3-state | Data sheet | 2024-11-29 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT764-1 | 3D model for products with SOT764-1 package | Design support | 2019-10-03 |
| 74vhc245 | 74vhc245 IBIS model | IBIS model | 2013-04-08 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DHVQFN20_SOT764-1_mk | plastic, dual in-line compatible thermal enhanced very thin quad flat package; 20 terminals; 0.5 mm pitch; 2.5 mm x 4.5 mm x 0.85 mm body | Marcom graphics | 2017-01-28 |
| SOT764-1 | plastic, leadless dual in-line compatible thermal enhanced very thin quad flat package; 20 terminals; 0.5 mm pitch; 4.5 mm x 2.5 mm x 1 mm body | Package information | 2022-06-21 |
| SOT764-1_115 | DHVQFN20; Reel pack for SMD, 7''; Q1/T1 product orientation | Packing information | 2025-10-24 |
| 74VHC245BQ_Nexperia_Product_Reliability | 74VHC245BQ Nexperia Product Reliability | Quality document | 2025-03-20 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
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訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線(xiàn)購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| 74VHC245BQ | 74VHC245BQ,115 | 935289581115 | Active | SOT764-1_115 | 3,000 |
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樣品
作為 Nexperia 的客戶(hù)，您可以通過(guò)我們的銷(xiāo)售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶(hù)，我們的全球和地區(qū)分銷(xiāo)商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷(xiāo)商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.