種類繁多的雙極晶體管助您輕松滿足系統(tǒng)需求。產(chǎn)品線涵蓋基礎(chǔ)雙極晶體管模塊，以及一系列節(jié)省空間和成本的帶電阻晶體管，直至我們突破性的小信號(hào)系列低壓降電壓器件。
我們豐富的二極管產(chǎn)品組合為您提供當(dāng)今市場(chǎng)所需的靈活性——無(wú)論是簡(jiǎn)單的齊納二極管、高效的肖特基整流器、快速恢復(fù)二極管還是可控雪崩開(kāi)關(guān)二極管。
涵蓋靜電放電保護(hù)、瞬態(tài)電壓抑制器件、共模扼流圈及電磁干擾濾波器，Nexperia的保護(hù)技術(shù)持續(xù)升級(jí)，在業(yè)界最小封裝中提供最高級(jí)別的防護(hù)。
Nexperia提供種類豐富的低/中壓（12-200 V）P溝道和N溝道硅MOSFET產(chǎn)品組合，采用多種節(jié)省空間且高效的封裝方案。
Nexperia的1200V碳化硅（SiC）MOSFET重新定義了安全、穩(wěn)健且可靠的電源開(kāi)關(guān)標(biāo)準(zhǔn)，成為電動(dòng)汽車充電基礎(chǔ)設(shè)施、光伏逆變器及電機(jī)驅(qū)動(dòng)領(lǐng)域的首選產(chǎn)品。
針對(duì)各類高壓（650 V）和低壓（40-150 V）應(yīng)用場(chǎng)景，Nexperia氮化鎵場(chǎng)效應(yīng)晶體管憑借更低的導(dǎo)通損耗與開(kāi)關(guān)損耗，實(shí)現(xiàn)了最快速的過(guò)渡/開(kāi)關(guān)能力、最佳的功率效率以及更高的功率密度。
為滿足高效高壓電源轉(zhuǎn)換和電機(jī)驅(qū)動(dòng)日益增長(zhǎng)的需求，Nexperia的IGBT采用堅(jiān)固且經(jīng)濟(jì)高效的載流子存儲(chǔ)溝槽柵極（CSTBT）先進(jìn)場(chǎng)截止（FS）結(jié)構(gòu)。
除全面的邏輯功能、模擬開(kāi)關(guān)和I2C接口產(chǎn)品組合外，Nexperia還提供日益豐富的功率IC產(chǎn)品線，助力打造創(chuàng)新解決方案，專注于降低客戶物料清單成本，提升系統(tǒng)效率與可靠性。
為助力實(shí)現(xiàn)互聯(lián)電動(dòng)及混合動(dòng)力車輛，Nexperia半導(dǎo)體提供全系列符合AEC-Q100/Q101認(rèn)證的器件，涵蓋我們完整的產(chǎn)品組合，這些產(chǎn)品兼具高效能與高效設(shè)計(jì)特性。
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Click here for more informationHigh-speed switching diode
High-speed switching diode, encapsulated in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package.
High switching speed: trr ≤ 4 ns
Low capacitance
Low leakage current
Reverse voltage: VR ≤ 100 V
Repetitive peak reverse voltage: VRRM ≤ 100 V
High-speed switching
General-purpose switching
| 型號(hào) | Package version | Package name | Size (mm) | VR [max] (V) | IFSM [max] (A) | VF [max] (mV) | IR [max] (nA) | IFRM (mA) | Configuration | trr [max] (ns) | IF [max] (mA) | Cd [max] (pF) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BAS316 | SOD323 | SOD323 | 1.7 x 1.25 x 0.95 | 100 | 4 | 1000@IF=50mA | 500@VR=80V | 500 | single | 4 | 250 | 1.5 | N |
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BAS316 | BAS316,115 (934054945115) |
Active | A6 |
(SOD323) |
SOD323 |
WAVE_BG-BD-1
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SOD323_115 |
| BAS316,135 (934054945135) |
Active | A6 | SOD323_135 | ||||
| BAS316Z (934054945145) |
Active | A6 | SOD323_145 | ||||
| BAS316/DG,115 (934061934115) |
Active | KN | SOD323_115 |
| Part number | Description | Type | Quick links | Shop link |
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描述 The NX-HB-GAN3R2-BSC half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 100V E-Mode GaN FETs. The circuit is configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high / low level inputs. The voltage input and output can operate at up to 60 VDC, with a power output > 350 W
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類型 Evaluation board
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Quick links
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Shop link
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描述 NXP's ASLx500SHN and ASLx41xSHN Evaluation Board is designed to drive six LED strings with 150 mA to 1.6 A and 2 V to 60 V LED string voltage. Among the numerous Nexperia products on-board in the boost converter stage are 80 V MOSFETs in LFPAK56 and 100 V Schottky Rectifiers. The buck converter incorporates 80 V DFN2020 MOSFETs and 54 V TVS diodes.
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類型 Reference design
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Quick links
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Shop link
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| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
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| BAS316 | BAS316,115 | BAS316 |
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| BAS316 | BAS316,135 | BAS316 |
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| BAS316 | BAS316Z | BAS316 |
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| BAS316 | BAS316/DG,115 | BAS316 |
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| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BAS316 | High-speed switching diode | Data sheet | 2022-06-30 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_document_brochure_ESD-Protection-Applications_022017 | ESD Protection Application guide | Brochure | 2018-12-21 |
| SOD323 | 3D model for products with SOD323 package | Design support | 2022-11-04 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOD323_mk | plastic, surface-mounted package; 2 leads; 1.3 mm pitch; 1.7 mm x 1.25 mm x 0.95 mm body | Marcom graphics | 2017-01-28 |
| LSYMDIO | Letter Symbols - Diodes General | Other type | 1999-04-30 |
| SOD323 | plastic, surface-mounted package; 2 leads; 1.3 mm pitch; 1.7 mm x 1.25 mm x 0.95 mm body | Package information | 2022-05-27 |
| SOD323_115 | Reel pack for SMD, 7"; Q1/T1-Q2/T3 product orientation | Packing information | 2025-01-20 |
| SOD323_135 | Reel pack for SMD, 11"; Q1/T1-Q2/T3 product orientation | Packing information | 2025-01-20 |
| SOD323_145 | Reel pack for SMD, 7"; Q1/T1-Q2/T3 product orientation | Packing information | 2025-01-20 |
| SOD323_115 | Reel pack for SMD, 7"; Q1/T1-Q2/T3 product orientation | Packing information | 2025-01-20 |
| BAS316_Nexperia_Product_Reliability | BAS316 Nexperia Product Reliability | Quality document | 2025-05-28 |
| BAS316 | BAS316 SPICE model | SPICE model | 2025-10-11 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| BAS316 | BAS316,115 | 934054945115 | Active | SOD323_115 | 3,000 |
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| BAS316 | BAS316,135 | 934054945135 | Active | SOD323_135 | 10,000 |
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| BAS316 | BAS316Z | 934054945145 | Active | SOD323_145 | 30,000 |
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| BAS316 | BAS316/DG,115 | 934061934115 | Active | SOD323_115 | 3,000 |
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作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
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