可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| BUK7A1R0-100L | BUK7A1R0-100LJ | 934669583118 | SOT8000A | 訂單產(chǎn)品 |
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Click here for more informationBUK7A1R0-100L
N-channel 100V, 0.99mΩ, Standard Level MOSFET in CCPAK1212
Automotive qualified N-channel MOSFET using the latest Trench 12 low ohmic split-gate technology, for ultra-low RDS(on) capability, housed in a CCPAK1212 (SOT8000A) package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability.
Features and benefits
Fully automotive qualified to AEC-Q101:
175 °C rating suitable for thermally demanding automotive environments.
Trench 12 split-gate trench technology:
Reduced cell pitch enables enhanced power density resulting in lower conduction losses.
Fast and efficient switching with optimal damping for low spiking and improved switching efficiency.
CCPAK mounting base
Large cross-sectional area of exposed drain tab for excellent thermal dissipation and low steady state thermal resistance.
CCPAK gull-wing leads:
High Board Level Reliability (BLR), pins absorbing mechanical stress during thermal cycling.
Visual (AOI) soldering inspection, no need for expensive x-ray equipment.
CCPAK copper clip technology:
Low transient thermal resistance and package inductance.
High maximum current capability and improved current spreading on silicon die.
Applications
Light-electric / Electric vehicle applications
48V to 12V DC-DC Converters
Synchronous rectifier for On-Board Charging (OBC) systems
48V Traction Inverters
48V Belt Starter Generator (BSG)
Battery Management Systems
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK7A1R0‑100L | SOT8000A | CCPAK1212 | Production | N | 1 | 100 | 0.99 | 175 | 460 | 69.5 | 359 | 1550 | 99 | 3 | Y | 24017 | 5556 | 2025-08-20 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BUK7A1R0‑100L | BUK7A1R0‑100LJ (934669583118) |
Active | X7A1R010L |
CCPAK1212 (SOT8000A) |
SOT8000A | SOT8000A_118 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BUK7A1R0‑100L | BUK7A1R0‑100LJ | BUK7A1R0-100L |
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Series
文檔 (20)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK7A1R0-100L | N-channel 100V, 0.99mΩ, Standard Level MOSFET in CCPAK1212 | Data sheet | 2025-08-26 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2025-09-10 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2025-10-21 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-10-21 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-09-08 |
| AN50005 | Paralleling power MOSFETs in high power applications | Application note | 2025-09-30 |
| AN50006 | Power MOSFETs in linear mode | Application note | 2025-09-08 |
| AN50014 | Understanding the MOSFET peak drain current rating | Application note | 2025-09-08 |
| AN50019 | Thermal boundary condition study on MOSFET packages and PCB substrates | Application note | 2025-10-21 |
| AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2025-09-08 |
| AN90016 | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2025-09-08 |
| AN90046 | CCPAK1212i Design Guide | Application note | 2025-09-08 |
| SOT8000A | 3D model for products with SOT8000A package | Design support | 2024-11-20 |
| BUK7A1R0-100L_LTspice_V1 | BUK7A1R0-100L Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2025-07-10 |
| SOT8000A | Plastic, surface mounted copper clip package (CCPAK1212);13 terminals; 2.0 mm pitch, 12 mm x 12 mm x 2.5 mm body | Package information | 2025-05-13 |
| SOT8000A_118 | CCPAK1212; Reel pack for SMD, 13"; Q1/T1 product orientation | Packing information | 2025-08-28 |
| BUK7A1R0-100L | BUK7A1R0-100L SPICE model | SPICE model | 2025-07-10 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2025-09-10 |
| BUK7A1R0-100L_Cauer | BUK7A1R0-100L Cauer model | Thermal model | 2025-06-24 |
| BUK7A1R0-100L_Foster | BUK7A1R0-100L Foster model | Thermal model | 2025-06-24 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK7A1R0-100L_LTspice_V1 | BUK7A1R0-100L Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2025-07-10 |
| BUK7A1R0-100L | BUK7A1R0-100L SPICE model | SPICE model | 2025-07-10 |
| BUK7A1R0-100L_Cauer | BUK7A1R0-100L Cauer model | Thermal model | 2025-06-24 |
| BUK7A1R0-100L_Foster | BUK7A1R0-100L Foster model | Thermal model | 2025-06-24 |
| SOT8000A | 3D model for products with SOT8000A package | Design support | 2024-11-20 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| BUK7A1R0‑100L | BUK7A1R0‑100LJ | 934669583118 | Active | SOT8000A_118 | 1,000 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.