可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| BUK7J2R4-80M | BUK7J2R4-80MX | 934667068115 | SOT1023 | 訂單產(chǎn)品 |
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Click here for more informationBUK7J2R4-80M
N-channel 80 V, 2.4 mOhm, Standard level MOSFET in LFPAK56E
Automotive qualified N-channel MOSFET using the latest Trench 14 low ohmic split-gate technology, for ultra-low RDSon capability, housed in a LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.
Features and benefits
Fully automotive qualified to AEC-Q101:
175 °C rating suitable for thermally demanding environments
Trench 14 split-gate technology:
Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in same footprint
Fast and efficient switching with optimal damping and low spiking
LFPAK Gull Wing leads:
High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joints
LFPAK copper clip technology:
Improved reliability, with reduced Rth, RDSon and package inductance
Increases maximum current capability and improved current spreading
Applications
12 V, 24 V and 48 V automotive systems
Motor, lighting and solenoid control
Ultra high-performance power switching
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK7J2R4‑80M | SOT1023 | LFPAK56E; Power-SO8 | Production | N | 1 | 80 | 2.4 | 175 | 231 | 16.5 | 85 | 294 | 33 | 3 | Y | 5850 | 1385 | 2023-10-10 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BUK7J2R4‑80M | BUK7J2R4‑80MX (934667068115) |
Active | 72M480J |
LFPAK56E; Power‑SO8 (SOT1023) |
SOT1023 | SOT1023_115 |
環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BUK7J2R4‑80M | BUK7J2R4‑80MX | BUK7J2R4-80M |
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Series
文檔 (25)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| BUK7J2R4-80M | N-channel 80 V, 2.4 mOhm, Standard level MOSFET in LFPAK56E | Data sheet | 2024-07-03 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2025-09-10 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2025-10-21 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-09-08 |
| AN50001 | Reverse battery protection in automotive applications | Application note | 2025-10-21 |
| AN50003 | Driving solenoids in automotive applications | Application note | 2025-04-09 |
| AN50004 | Using power MOSFETs in DC motor control applications | Application note | 2021-03-02 |
| AN50009 | Power MOSFET applications in automotive BLDC and PMSM drives | Application note | 2022-07-05 |
| AN50014 | Understanding the MOSFET peak drain current rating | Application note | 2025-09-08 |
| AN50020 | MOSFETs in Power Switch applications | Application note | 2025-10-21 |
| AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2025-09-08 |
| AN90003 | LFPAK MOSFET thermal design guide | Application note | 2025-09-30 |
| AN90016 | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2025-09-08 |
| AN90019 | LFPAK MOSFET thermal resistance - simulation, test and optimization of PCB layout | Application note | 2020-07-20 |
| AN90059 | Power MOSFET gate driver fundamentals | Application note | 2025-09-10 |
| AN90032 | Low temperature soldering, application study | Application note | 2022-02-22 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT1023 | 3D model for products with SOT1023 package | Design support | 2017-06-29 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK56_SOT1023_mk | plastic, single-ended surface-mounted package (LFPAK56); 4 leads; 1.27 mm pitch; 4.58 mm x 5.13 mm x 1.03 mm body | Marcom graphics | 2017-01-28 |
| BUK7J2R4-80M_LTspice_V1 | BUK7J2R4-80M Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2024-08-15 |
| SOT1023 | plastic, single-ended surface-mounted package (LFPAK56E); 4 leads; 1.27 mm pitch | Package information | 2024-08-28 |
| SOT1023_115 | LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2022-06-07 |
| BUK7J2R4-80M_Zth_Cauer | BUK7J2R4-80M RC Cauer model | Thermal model | 2024-09-11 |
| BUK7J2R4-80M_Zth_Foster | BUK7J2R4-80M RC Foster model | Thermal model | 2024-10-01 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| BUK7J2R4-80M_LTspice_V1 | BUK7J2R4-80M Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2024-08-15 |
| BUK7J2R4-80M_Zth_Cauer | BUK7J2R4-80M RC Cauer model | Thermal model | 2024-09-11 |
| BUK7J2R4-80M_Zth_Foster | BUK7J2R4-80M RC Foster model | Thermal model | 2024-10-01 |
| SOT1023 | 3D model for products with SOT1023 package | Design support | 2017-06-29 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| BUK7J2R4‑80M | BUK7J2R4‑80MX | 934667068115 | Active | SOT1023_115 | 1,500 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.