Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationBUK7L11-34ARC
N-channel TrenchPLUS standard level FET
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include internal gate resistors and TrenchPLUS diodes for clamping and ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Features and benefits
- AEC-Q101 compliant
- Low conduction losses due to low on-state resistance
- Reduced component count due to integrated gate resistor
Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | Automotive qualified | Release date |
|---|---|---|---|---|---|---|---|
| BUK7L11‑34ARC | SOT78C | TO-220AB | End of life | N | 1 | Y | 2011-02-23 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BUK7L11‑34ARC | BUK7L11‑34ARC,127 (934057492127) |
Obsolete | BUK7L11 34ARC P**XXYY AZ Batch No | no package information | |||
| BUK7L11‑34ARC/E,12 (934061336127) |
Obsolete | ||||||
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BUK7L11‑34ARC | BUK7L11‑34ARC,127 | BUK7L11‑34ARC |
|
|
| BUK7L11‑34ARC | BUK7L11‑34ARC/E,12 | BUK7L11‑34ARC |
|
|
Series
文檔 (12)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK7L11-34ARC | N-channel TrenchPLUS standard level FET | Data sheet | 2009-02-17 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2025-09-10 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2025-10-21 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-10-21 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11160 | Designing RC Snubbers | Application note | 2025-09-10 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-09-08 |
| AN11261 | RC Thermal Models | Application note | 2025-09-10 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2025-09-10 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
No documents available
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.