可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| BUK9Q4R6-40H | BUK9Q4R6-40HJ | 934670277118 | SOT8002-3 | 訂單產(chǎn)品 |
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Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D)
Logic level N-Channel MOSFET in a small MLPAK33-WF (SOT8002-3D) package using Trench 9 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability.
Features and benefits
Trench 9 technology
Small footprint (3 x 3 mm) for compact design
Qualified to AEC-Q101 at 175 °C
Side-wettable flanks for robust solder joints and automated optical inspection
Applications
Motor drive
Battery protection
DC-DC conversion
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK9Q4R6‑40H | SOT8002-3 | MLPAK33-WF | Production | N | 1 | 40 | 4.6 | 5.98 | 175 | 90 | 3.7 | 17 | 38 | 84 | 15 | 1.63 | Y | 2604 | 462 | 2025-05-07 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BUK9Q4R6‑40H | BUK9Q4R6‑40HJ (934670277118) |
Active | 6AR |
MLPAK33‑WF (SOT8002-3) |
SOT8002-3 | 暫無信息 |
環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BUK9Q4R6‑40H | BUK9Q4R6‑40HJ | BUK9Q4R6-40H |
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Series
文檔 (12)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK9Q4R6-40H | Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) | Data sheet | 2025-05-07 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-10-21 |
| AN11160 | Designing RC Snubbers | Application note | 2025-09-10 |
| AN11261 | RC Thermal Models | Application note | 2025-09-10 |
| AN50002 | Automotive LED side light SEPIC DC-to-DC converter design example | Application note | 2025-09-10 |
| AN50019 | Thermal boundary condition study on MOSFET packages and PCB substrates | Application note | 2025-10-21 |
| AN90011 | Half-bridge MOSFET switching and its impact on EMC | Application note | 2025-09-10 |
| AN90059 | Power MOSFET gate driver fundamentals | Application note | 2025-09-10 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT8002-3 | plastic thermal enhanced surface mounted package with side-wettable flanks (SWF); mini leads; 8 terminals;pitch 0.65 mm; 3.3 x 3.3 x 0.8 mm body | Package information | 2025-08-06 |
| BUK9Q4R6-40H | BUK9Q4R6-40H SPICE model | SPICE model | 2025-07-10 |
| BUK9Q4R6-40H | BUK9Q4R6-40H RC thermal model | Thermal model | 2025-08-21 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK9Q4R6-40H | BUK9Q4R6-40H SPICE model | SPICE model | 2025-07-10 |
| BUK9Q4R6-40H | BUK9Q4R6-40H RC thermal model | Thermal model | 2025-08-21 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| BUK9Q4R6‑40H | BUK9Q4R6‑40HJ | 934670277118 | Active | 暫無信息 | 3,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.