可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| BUK9Y25-80E | BUK9Y25-80E,115 | 934067031115 | SOT669 | 訂單產(chǎn)品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationBUK9Y25-80E
N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
Applications
12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK9Y25‑80E | SOT669 | LFPAK56; Power-SO8 | Production | N | 1 | 80 | 25 | 27 | 175 | 37 | 5.8 | 95 | 27 | 1.7 | Y | 2032 | 147 | 2013-02-14 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BUK9Y25‑80E | BUK9Y25‑80E,115 (934067031115) |
Active | 92580E |
LFPAK56; Power‑SO8 (SOT669) |
SOT669 |
WAVE_BG-BD-1
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SOT669_115 |
Boards
| Part number | Description | Type | Quick links | Shop link |
|---|---|---|---|---|
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描述 NXP's ASLx500SHN and ASLx41xSHN Evaluation Board is designed to drive six LED strings with 150 mA to 1.6 A and 2 V to 60 V LED string voltage. Among the numerous Nexperia products on-board in the boost converter stage are 80 V MOSFETs in LFPAK56 and 100 V Schottky Rectifiers. The buck converter incorporates 80 V DFN2020 MOSFETs and 54 V TVS diodes.
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類型 Reference design
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Quick links
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Shop link
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環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BUK9Y25‑80E | BUK9Y25‑80E,115 | BUK9Y25-80E |
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文檔 (24)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK9Y25-80E | N-channel TrenchMOS logic level FET | Data sheet | 2017-04-20 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2025-09-10 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2025-10-21 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-10-21 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11160 | Designing RC Snubbers | Application note | 2025-09-10 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-09-08 |
| AN11261 | RC Thermal Models | Application note | 2025-09-10 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK56_POWER-SO8_SOT669_mk | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| BUK9xxxx-80E_LTspice_V3 | BUK9xxxx-80E Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2022-12-14 |
| BUK9xxxx-80E_LTspice_V3 | BUK9xxxx-80E Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2023-07-12 |
| SOT669 | plastic, single-ended surface-mounted package; 4 terminals | Package information | 2025-03-20 |
| SOT669_115 | LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2022-05-10 |
| BUK9Y25-80E | BUK9Y25-80E Spice model | SPICE model | 2013-02-22 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2025-09-10 |
| BUK9Y25-80E_RC_Thermal_Model | BUK9Y25-80E Thermal design model | Thermal design | 2021-01-18 |
| BUK9Y25-80E | BUK9Y25-80E Thermal model | Thermal model | 2013-02-26 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK9xxxx-80E_LTspice_V3 | BUK9xxxx-80E Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2022-12-14 |
| BUK9xxxx-80E_LTspice_V3 | BUK9xxxx-80E Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2023-07-12 |
| BUK9Y25-80E | BUK9Y25-80E Spice model | SPICE model | 2013-02-22 |
| BUK9Y25-80E_RC_Thermal_Model | BUK9Y25-80E Thermal design model | Thermal design | 2021-01-18 |
| BUK9Y25-80E | BUK9Y25-80E Thermal model | Thermal model | 2013-02-26 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| BUK9Y25‑80E | BUK9Y25‑80E,115 | 934067031115 | Active | SOT669_115 | 1,500 |
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樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.