可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| IP4283CZ10-TBA | IP4283CZ10-TBA,115 | 934064664115 | SOT1165-1 | 訂單產(chǎn)品 |
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ESD protection for ultra high-speed interfaces
The devices are designed to protect high-speed interfaces such as High-Definition Multimedia Interface (HDMI), DisplayPort, external Serial Advanced Technology Attachment (eSATA) and Low-Voltage Differential Signaling (LVDS) interfaces against ElectroStatic Discharge (ESD).
The devices include four high-level ESD protection diode structures for ultra high-speed signal lines.
All signal lines are protected by a special diode configuration offering ultra low line capacitance of only 0.6 pF. These diodes provide protection to downstream components from ESD voltages up to ±8 kV contact according to IEC 61000-4-2, level 4.
Features and benefits
System ESD protection for HDMI, DisplayPort, eSATA and LVDS
All signal lines with integrated rail-to-rail clamping diodes for downstream ESD protection of ±8 kV according to IEC 61000-4-2, level 4
Matched 0.5 mm trace spacing
Signal lines with ≤ 0.05 pF matching capacitance between signal pairs
Line capacitance of only 0.6 pF for each channel
Design-friendly ‘pass-thru’ signal routing
Applications
The devices are designed for high-speed receiver and transmitter port protection:
TVs, monitors
DVD recorders and players
Notebooks, main board graphics cards and ports
Set-top boxes and game consoles
參數(shù)類型
| 型號(hào) | Package name | Nr of lines | Configuration | VRWM (V) (V) | Cd [typ] (pF) | VESD IEC61000-4-2 (kV) |
|---|---|---|---|---|---|---|
| IP4283CZ10‑TBA | DFN2510-10 | 4 | Unidirectional | 5.5 | 0.26 | 8 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| IP4283CZ10‑TBA | IP4283CZ10‑TBA,115 (934064664115) |
Active | 83 |
DFN2510‑10 (SOT1165-1) |
SOT1165-1 | SOT1165-1_115 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| IP4283CZ10‑TBA | IP4283CZ10‑TBA,115 | IP4283CZ10-TBA |
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Series
文檔 (8)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| IP4283CZ10_SER | ESD protection for ultra high-speed interfaces | Data sheet | 2020-04-28 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT1165-1 | 3D model for products with SOT1165-1 package | Design support | 2023-03-13 |
| SOT1165 | 3D model for products with SOT1165 package | Design support | 2019-10-03 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT1165-1 | plastic, leadless extremely thin small outline package; 10 terminals; 0.5 mm pitch; 2.5 mm x 1 mm x 0.5 mm body | Package information | 2022-06-07 |
| SOT1165-1_115 | XSON10-01; Reel pack, SMD, 7"; Q1/T1 standard product orientation; Orderable part number ending ,115 or X; Ordering code (12NC) ending 115 | Packing information | 2020-04-21 |
| IP4283CZ10-TBA_Nexperia_Product_Reliability | IP4283CZ10-TBA Nexperia Product Reliability | Quality document | 2024-04-29 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| IP4283CZ10‑TBA | IP4283CZ10‑TBA,115 | 934064664115 | Active | SOT1165-1_115 | 5,000 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.