可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
|---|---|---|---|---|
| NGW40T65M3DFP | NGW40T65M3DFPQ | 934668245127 | SOT429-5 | 訂單產品 |
| NGW40T65M3DFP | NGW40T65M3DFP/A00Z | 934671645347 | SOT429-5 | 訂單產品 |
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Click here for more informationNGW40T65M3DFP
650 V, 40 A trench field-stop IGBT with full rated silicon diode
The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-?circuit withstand time of 5 μs. This hard?-?switching 650 V, 40 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
Features
Device current is rated at 40 A
Low conduction and switching losses
Stable and tight parameters for easy parallel operation
Maximum junction temperature 175 °C
Fully rated and soft fast reverse recovery diode
5 μs short circuit withstand time
HV-H3TRB qualified
Applications
Motor drives for industrial and consumer appliances
Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc.
Power inverters, such as
Uninterruptible Power Supply (UPS) inverter
EV charging converter
Induction heating
Welding
參數(shù)類型
| 型號 | Product status | VCE [max] (V) | IC [typ] (A) | Configuration | tsc [max] (μs) | Tj [min] (°C) | Tj [max] (°C) | Package version | Package name |
|---|---|---|---|---|---|---|---|---|---|
| NGW40T65M3DFP | Production | 650 | 40 | MS | 5 | -40 | 175 | SOT429-5 | TO-247-3 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| NGW40T65M3DFP | NGW40T65M3DFPQ (934668245127) |
Active | W40T65M3DFP |
TO‑247‑3 (SOT429-5) |
SOT429-5 | 暫無信息 | |
| NGW40T65M3DFP/A00Z (934671645347) |
Active | W40T65M3DFP | 暫無信息 |
下表中的所有產品型號均已停產 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| NGW40T65M3DFP | NGW40T65M3DFPZ (934668245347) |
Withdrawn / End-of-life | W40T65M3DFP |
TO‑247‑3 (SOT429-5) |
SOT429-5 | 暫無信息 |
環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| NGW40T65M3DFP | NGW40T65M3DFPQ | NGW40T65M3DFP |
|
|
| NGW40T65M3DFP | NGW40T65M3DFP/A00Z | NGW40T65M3DFP |
|
|
下表中的所有產品型號均已停產 。
| 型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| NGW40T65M3DFP | NGW40T65M3DFPZ | NGW40T65M3DFP |
|
|
文檔 (4)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| NGW40T65M3DFP | 650 V, 40 A trench field-stop IGBT with full rated silicon diode | Data sheet | 2025-02-28 |
| AN90042 | Nexperia 650 V (G3) IGBT product introduction | Application note | 2025-08-06 |
| SOT429-2 | SOT429-2.step | Design support | 2024-11-22 |
| SOT429-5 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3 | Package information | 2025-11-03 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| SOT429-2 | SOT429-2.step | Design support | 2024-11-22 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| NGW40T65M3DFP | NGW40T65M3DFPQ | 934668245127 | Active | 暫無信息 | 450 |
|
| NGW40T65M3DFP | NGW40T65M3DFP/A00Z | 934671645347 | Active | 暫無信息 | 240 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網絡可為您提供 Nexperia 樣品支持。查看官方經銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.