可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| NPS7601UP | NPS7601UPZ | 935692703336 | WLCSP4_SOT8113 | 訂單產(chǎn)品 |
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Click here for more informationCompact parallelable 1.5 V to 5.5 V, 1.5 A, low Iq load switch with true reverse current blocking
The NPS7601 is a compact, single-channel, regulated forward-drop load switch with always-on, true reverse current blocking capabilities. It provides efficient switching between power rails, minimizing power loss and enabling precise load control.
The NPS7601 operates across an input voltage range of 1.5 V to 5.5 V, and supports up to 1.5 A of continuous current. An active-high enable (EN) input controls its operation, allowing for isolation of the load by blocking current in both directions when the pin is held low. When EN is asserted high and the input voltage exceeds the output, the NPS7601 turns on in a controlled manner, managing inrush current to prevent voltage droop on the power source.
To achieve fast-acting, true reverse current blocking with minimal transient reverse current, the device utilizes a regulated forward voltage scheme. This active control method overcomes the limitations of common IN-to-OUT voltage comparator-based solutions, which often require hundreds of milliamps before activation.
The NPS7601 is suitable for various applications, including:
Power supply sequencing
Power supply multiplexing
Power supply OR-ing
Parallel operation for high-current loads
NPS7601 is offered in a compact WLCSP4 (SOT8113) package and is qualified for operation over an ambient temperature range of -40 °C to 125 °C.
Input voltage range: 1.5 V to 5.5 V
Maximum continuous current: 1.5 A
Low quiescent current (IQ): 600 nA (typ)
Low shutdown current (ISD): 120 nA (typ)
Reverse leakage current: -220 nA (out of the IN pin)
True reverse current blocking
VIN ≥ 1.5 V (with EN is HIGH and VOUT ≥ VIN)
VIN = 0 V (when VOUT ≥ VIN)
Controlled rise time at start-up
Over-temperature protection
Short-circuit protection
SOT8113, 4-pin wafer-level chip-scale package
Ambient temperature range (Ta): -40 °C to +125 °C
Consumer electronics
Wearables
IoT devices
Battery powered and battery backup systems
USB powered devices
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| 型號(hào) | 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| NPS7601UP | NPS7601UPZ (935692703336) |
Active | sG |
WLCSP4 (WLCSP4_SOT8113) |
WLCSP4_SOT8113 | WLCSP4_SOT8113_336 |
| Part number | Description | Type | Quick links | Shop link |
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描述 The NEVB-NPS7601 evaluation board is a two-layer PCB with one NPS7601 load switch. It allows users to evaluate the device behavior under different application conditions.
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類型 Evaluation board
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Quick links
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Shop link
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| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| WLCSP4_SOT8113 | 3D model for products with WLCSP4_SOT8113 package | Design support | 2025-11-06 |
| WLCSP4_SOT8113 | WLCSP4: wafer level chip-size package; 4 bumps | Package information | 2025-10-16 |
| WLCSP4_SOT8113_336 | WLCSP4; Reel dry pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2025-10-16 |
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| WLCSP4_SOT8113 | 3D model for products with WLCSP4_SOT8113 package | Design support | 2025-11-06 |
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| NPS7601UP | NPS7601UPZ | 935692703336 | Active | WLCSP4_SOT8113_336 | 3,000 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.