可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| NXT4556AUR | NXT4556AURZ | 935691831336 | SOT8057-1 | 訂單產(chǎn)品 |
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Click here for more informationNXT4556AUR
SIM card interface level translator
The NXT4556AUR device is built for interfacing a SIM card with a single low-voltage host side interface. The NXT4556AUR has three level translators to convert the data, RST and CLK signals between a SIM card and a host microcontroller. A high speed level translation capable of supporting class?-?B, class?-?C SIM cards. VCC_SIM power-down initiates a shutdown sequence on SIM card pins in accordance with ISO-7816-3.
The NXT4556AUR is compliant with all ETSI, IMT-2000 and ISO-7816 SIM/Smart card interface requirements.
Features and benefits
Support SIM cards and eSIM with supply voltages 1.62 V to 3.3 V
Host micro-controller operating voltage range: 1.08 V to 1.98 V
Automatic level translation of I/O, RST and CLK between SIM card and host side interface with capacitance isolation
Incorporates shutdown feature for the SIM card signals according to ISO-7816-3
High Vdis(UVLO_AC) switching level, arranging quick shut down when VCC_SIM powers down
Integrated pull-up resistors; no external resistor required
Integrated EMI Filters suppresses higher harmonics of digital I/O's
Low current shutdown mode < 1 μA
Supports clock speed beyond 5 MHz clock
Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2 kV
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1 kV
IEC61000-4-2 level 4, contact and air discharge on all SIM card-side pins exceeds 8 kV and 15 kV
Fast activation at power up
Smooth IO signals at activation
Applications
NXT4556AUR can be used with a range of SIM card attached devices including:
Mobile and personal phones
Wireless modems
SIM card terminals
參數(shù)類型
| 型號 | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name | Category |
|---|---|---|---|---|---|---|---|---|---|---|
| NXT4556AUR | 1.08?-?1.98 | 1.62?-?3.3 | CMOS | ± 1 | 20 | 3 | low | -40~85 | WLCSP9 | Application specific |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| NXT4556AUR | NXT4556AURZ (935691831336) |
Active | z6 |
WLCSP9 (SOT8057-1) |
SOT8057-1 | SOT8057-1_336 |
Series
文檔 (6)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| NXT4556AUR | SIM card interface level translator | Data sheet | 2023-12-05 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| nxt4556aur | NXT4556AUR IBIS model | IBIS model | 2023-12-05 |
| SOT8057-1 | wafer level chip-scale pakage; 9 bumps; 0.92 × 0.92 × 0.42 mm body | Package information | 2023-06-13 |
| SOT8057-1_336 | WLCSP9; Reel dry pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2023-08-10 |
| NXT4556AUR_Nexperia_Product_Reliability | NXT4556AUR Nexperia Product Reliability | Quality document | 2025-03-20 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| nxt4556aur | NXT4556AUR IBIS model | IBIS model | 2023-12-05 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| NXT4556AUR | NXT4556AURZ | 935691831336 | Active | SOT8057-1_336 | 3,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.