可訂購部件
| 型號(hào) | 可訂購的器件編號(hào) | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PBSS5630PA | PBSS5630PA,115 | 934063496115 | SOT1061 | 訂單產(chǎn)品 |
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Click here for more informationPBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistor
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
NPN complement: PBSS4630PA.
Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
參數(shù)類型
| 型號(hào) | Package version | Package name | Size (mm) | channel type (e) | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] | TJ [max] (°C) | fT [min] (MHz) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS5630PA | SOT1061 | DFN2020-3 | 2 x 2 x 0.65 | PNP | 500.0 | -30.0 | -6000.0 | 230.0 | 150 | 50.0 | N |
封裝
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS5630PA | PBSS5630PA,115 (934063496115) |
Active | AB |
DFN2020‑3 (SOT1061) |
SOT1061 | SOT1061_115 |
環(huán)境信息
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS5630PA | PBSS5630PA,115 | PBSS5630PA |
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文檔 (11)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PBSS5630PA | 30 V, 6 A PNP low VCEsat (BISS) transistor | Data sheet | 2025-04-08 |
| AN11045 | Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors | Application note | 2013-03-04 |
| AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT1061 | 3D model for products with SOT1061 package | Design support | 2022-06-02 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN2020-3_SOT1061_mk | plastic, thermal enhanced ultra thin small outline package; 3 terminals; 1.3 mm pitch; 2 mm x 2 mm x 0.65 mm body | Marcom graphics | 2017-01-28 |
| SOT1061 | plastic, leadless thermal enhanced ultra thin small outline package; 3 terminals; 1.3 mm pitch; 2 mm x 2 mm x 0.65 mm body | Package information | 2022-05-27 |
| SOT1061_115 | DFN2020-3; Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-04-21 |
| PBSS5630PA_Nexperia_Product_Reliability | PBSS5630PA Nexperia Product Reliability | Quality document | 2025-05-27 |
| PBSS5630PA | PBSS5630PA SPICE model | SPICE model | 2025-07-09 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PBSS5630PA | PBSS5630PA SPICE model | SPICE model | 2025-07-09 |
| SOT1061 | 3D model for products with SOT1061 package | Design support | 2022-06-02 |
訂購、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PBSS5630PA | PBSS5630PA,115 | 934063496115 | Active | SOT1061_115 | 3,000 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.