可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PESD1V0R1BCSF | PESD1V0R1BCSFYL | 934667603315 | SOD962-2 | 訂單產(chǎn)品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationPESD1V0R1BCSF
Extremely low capacitance bidirectional ESD protection diode
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package, designed to protect one signal line from the damage caused by ESD and other transients.
Features and benefits
Bidirectional ESD protection of one line
VRWM = 1 V device
IEC 61000-4-5 (surge): IPP = 4.6 A peak pulse (average measured)
Extremely low diode capacitance Cd = 0.1 pF typical
- Extremely low insertion loss: -0.21 dB at 12.8 GHz TRM
Very high linearity: RF performance does not degrade over the operating voltage range
Low clamping voltage to protect sensitive I/Os
Extremely low-inductance protection path to ground
ESD protection up to ±10 kV average measured according to IEC 61000-4-2
Ultra small SMD package
Applications
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
Low voltage super speed data lines, to be placed between AC coupling C and protected IC
USB4 v 2 (Gen 4) and TB5 data lines
參數(shù)類型
| 型號 | Package name | Configuration | Cd [typ] (pF) | VESD IEC61000-4-2 (kV) |
|---|---|---|---|---|
| PESD1V0R1BCSF | DSN0603-2 | Bidirectional | 0.1 | 8 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PESD1V0R1BCSF | PESD1V0R1BCSFYL (934667603315) |
Active | T1 |
DSN0603-2 (SOD962-2) |
SOD962-2 | SOD962-2_315 |
文檔 (10)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PESD1V0R1BCSF_SDS | Extremely low capacitance bidirectional ESD protection diode | Short data sheet | 2025-04-08 |
| AN11046 | Recommendations for PCB assembly of DSN0603-2 | Application note | 2021-04-12 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_document_brochure_ESD-Protection-Applications_022017 | ESD Protection Application guide | Brochure | 2018-12-21 |
| SOD962-2 | 3D model for products with SOD962-2 package | Design support | 2023-02-02 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DSN0603-2_SOD962-2_mk | silicon, leadless ultra small package; 2 terminals; 0.4 mm pitch; 0.6 mm x 0.3 mm x 0.3 mm body | Marcom graphics | 2017-01-28 |
| SOD962-2 | silicon, leadless ultra small package; 2 terminals; 0.4 mm pitch; 0.6 mm x 0.3 mm x 0.3 mm body | Package information | 2021-01-06 |
| SOD962-2_315 | DSN0603-2 ; Reel pack for SMD, 7"; Q1/T1-Q2/T3 product orientation | Packing information | 2020-04-21 |
| PESD1V0R1BCSF_Nexperia_Product_Reliability | PESD1V0R1BCSF Nexperia Product Reliability | Quality document | 2025-05-30 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| SOD962-2 | 3D model for products with SOD962-2 package | Design support | 2023-02-02 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PESD1V0R1BCSF | PESD1V0R1BCSFYL | 934667603315 | Active | SOD962-2_315 | 9,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.