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Click here for more informationPMPB19R0UPE
20 V, P-channel Trench MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Low threshold voltage
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 2000 V HBM (class H2)
Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portable devices
Hard disk and computing power management
參數(shù)類(lèi)型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | VESD (kV) (kV) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth @25 C [min] (V) | VGSth [typ] (V) | VGSth [max] @25 C (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMPB19R0UPE | SOT1220-2 | DFN2020M-6 | End of life | P | 1 | -20 | 10 | 21 | 30 | 2000 | 150 | -11 | 5.1 | 16 | 1.8 | -0.4 | -0.6 | -0.9 | N | 1275 | 191 | 2022-02-24 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PMPB19R0UPE | PMPB19R0UPEX (934664275115) |
Discontinued / End-of-life | ZR |
DFN2020M‑6 (SOT1220-2) |
SOT1220-2 | SOT1220-2_115 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PMPB19R0UPE | PMPB19R0UPEX | PMPB19R0UPE |
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Series
文檔 (8)
| 文件名稱 | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| PMPB19R0UPE | 20 V, P-channel Trench MOSFET | Data sheet | 2022-02-24 |
| AN90023 | Thermal performance of DFN packages | Application note | 2020-11-23 |
| AN90059 | Power MOSFET gate driver fundamentals | Application note | 2025-09-10 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT1220-2 | 3D model for products with SOT1220-2 package | Design support | 2023-02-02 |
| nexperia_document_leaflet_SsMOS_for_mobile_2022-CHN | 適合移動(dòng)和便攜式設(shè)備的 大批量小信號(hào)MOSFET， 采用WLCSP和無(wú)引腳DFN封裝 | Leaflet | 2022-07-04 |
| nexperia_document_leaflet_SsMOS_for_mobile_2022 | High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages | Leaflet | 2022-07-04 |
| SOT1220-2 | plastic thermal enhanced ultra thin small outline package; no leads;6 terminals; body 2 x 2 x 0.65 mm | Package information | 2020-06-17 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| SOT1220-2 | 3D model for products with SOT1220-2 package | Design support | 2023-02-02 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.