可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PSMP061-60YE | PSMP061-60YEX | 934661721115 | SOT669 | 訂單產(chǎn)品 |
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Click here for more informationPSMP061-60YE
60 V, P-channel Trench MOSFET
P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
High thermal power dissipation capability
Suitable for thermally demanding environments due to 175 °C rating
Trench MOSFET technology
Applications
Reverse battery protection
Power management
High-side load switch
Motor drive
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMP061‑60YE | SOT669 | LFPAK56; Power-SO8 | Production | P | 1 | -60 | 61 | 93 | 175 | 4.3 | 20 | 66 | 37 | -2 | N | 1060 | 85 | 2021-01-13 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PSMP061‑60YE | PSMP061‑60YEX (934661721115) |
Active | 06160YE |
LFPAK56; Power‑SO8 (SOT669) |
SOT669 |
WAVE_BG-BD-1
|
SOT669_115 |
環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PSMP061‑60YE | PSMP061‑60YEX | PSMP061-60YE |
|
|
Series
文檔 (12)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PSMP061-60YE | 60 V, P-channel Trench MOSFET | Data sheet | 2021-01-13 |
| AN90059 | Power MOSFET gate driver fundamentals | Application note | 2025-09-10 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK56_POWER-SO8_SOT669_mk | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT669 | plastic, single-ended surface-mounted package; 4 terminals | Package information | 2025-03-20 |
| SOT669_115 | LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2022-05-10 |
| PSMP061-60YE | PSMP061-60YE SPICE model | SPICE model | 2021-01-22 |
| PSMP061-60YE_Cauer | PSMP061-60YE Cauer thremal model | Thermal model | 2021-03-23 |
| PSMP061-60YE_Foster | PSMP061-60YE Foster thermal model | Thermal model | 2021-03-23 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PSMP061-60YE | PSMP061-60YE SPICE model | SPICE model | 2021-01-22 |
| PSMP061-60YE_Cauer | PSMP061-60YE Cauer thremal model | Thermal model | 2021-03-23 |
| PSMP061-60YE_Foster | PSMP061-60YE Foster thermal model | Thermal model | 2021-03-23 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PSMP061‑60YE | PSMP061‑60YEX | 934661721115 | Active | SOT669_115 | 1,500 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.