可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PTVS58VS1UR-Q | PTVS58VS1UR-QX | 934664995115 | SOD123W | 訂單產(chǎn)品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationPTVS58VS1UR-Q
400 W Transient Voltage Suppressor
400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection.
Features and benefits
Rated peak pulse power: PPPM = 400 W (350 W for 3V3)
Reverse standoff voltage range: VRWM = 3.3 V to 64 V
Reverse current: IRM = 0.001 μA
Very low package height: 1 mm
Small plastic package suitable for surface-mounted design
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
Power supply protection
Automotive application
Industrial application
Power management
參數(shù)類型
| 型號 | Package version | PPPM @10/1000 μs [max] (W) | VRWM (V) (V) | Configuration | Nr of lines | VBR [min] (V) | VBR [max] (V) | VCL @ IPPM 10/1000 μs [max] (V) | IPPM @10/1000 μs [max] (A) | IRM [max] (μA) | Tj [max] (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| PTVS58VS1UR-Q | SOD123W | 400 | 58 | Unidirectional | 1 | 64.4 | 71.2 | 93.6 | 4.3 | 0.1 | 150 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PTVS58VS1UR-Q | PTVS58VS1UR-QX (934664995115) |
Active | B2 |
CFP3 (SOD123W) |
SOD123W |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOD123W_115 |
文檔 (14)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PTVSXS1UR-Q_SER | 400 W Transient Voltage Suppressor | Data sheet | 2023-08-22 |
| AN90002 | Wave soldering guidelines for flatpack packages | Application note | 2023-11-02 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_document_brochure_CFP_Schottky_rectifier | Schottky rectifiers in CFP packages | Brochure | 2020-01-28 |
| SOD123W | 3D model for products with SOD123W package | Design support | 2019-01-22 |
| Leaflet_Clip-bond_Flat_Power_CFP_Strategy-CN | CFP封裝的肖特基整流器 | Leaflet | 2025-08-01 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| CFP3_SOD123W_mk | plastic, surface mounted package; 2 terminals; 2.6 mm x 1.7 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOD123W | plastic, surface mounted package; 2 terminals; 2.6 mm x 1.7 mm x 1 mm body | Package information | 2020-04-21 |
| SOD123W_115 | Reel pack for SMD, 7''; Q1/T1-Q2/T3 product orientation | Packing information | 2020-06-11 |
| PTVS58VS1UR-Q_Nexperia_Product_Reliability | PTVS58VS1UR-Q Nexperia Product Reliability | Quality document | 2025-05-30 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| TN90007 | Evaluation of junction temperature and thermal stacks using the virtual junction | Technical note | 2024-09-02 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| SOD123W | 3D model for products with SOD123W package | Design support | 2019-01-22 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PTVS58VS1UR-Q | PTVS58VS1UR-QX | 934664995115 | Active | SOD123W_115 | 3,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.