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可訂購部件
| 型號(hào) | 可訂購的器件編號(hào) | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| NPS1001UP | NPS1001UPZ | 935692138336 | WLCSP8_SOT8068 | 訂單產(chǎn)品 |
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Click here for more informationNPS1001UP
0.5 V to 1.8 V, 1.5 A peak, 12 mΩ, load switch
NPS1001 is a low voltage, single-channel load switch with a low RDS,ON (12 mΩ) to minimize IR drop and power loss. It supports up to 0.6 A RMS current and a peak current of 1.5 A.
The switch is controlled by an enable input (EN) which is compatible with 1.2 V logic levels. When the load switch is enabled, the internal switch charges the output capacitor with a controlled inrush current. When the switch is disabled, an 8 Ω on-chip resistor discharges the output to ground and keeps it from floating.
The IC is powered from a separate BIAS pin which is rated for 3 V to 5 V operation.
NPS1001 has an over-temperature protection that latches the device OFF when the internal junction temperature is above the set point (Tth(OTLO)). At this time, the internal switch is turned off and the output discharge element turns on to discharge the output capacitor. The load switch can be enabled again by toggling the enable (EN) pin.
NPS1001 is available in an ultra-small, space saving, wafer level chip-scale package; 8 bumps; 1.42 mm × 0.72 mm × 0.465 mm body and is characterized for operation over ambient temperature range of –?40 °C to 105 °C.
Features and benefits
- 0.5 V to 1.8 V operation voltage
- 3 V to 5 V bias voltage
- Low RDS,ON: 12 mΩ (typical) at 25 °C, 16 mΩ (maximum) at 85 °C
- Enable logic supports 1.2 V logic levels
- 0.6 A RMS and 1.5 A peak current capability
- Controlled start-up
- <200 μs from enable to full enhancement of power FET
- Output short tolerant
- When supplied by a 4.5 A current limited power supply
- Over-temperature shutdown and input UVLO protection
- 8 Ω discharge while disabled
- Small package footprint
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C2a exceeds 500 V
Specified from Tj = -40 °C to +105 °C
Applications
Mobile phones
Wearables
PCB Symbol, Footprint and 3D Model
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封裝
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| NPS1001UP | NPS1001UPZ (935692138336) |
Active | sD |
(WLCSP8_SOT8068) |
WLCSP8_SOT8068 | 暫無信息 |
Boards
| Part number | Description | Type | Quick links | Shop link |
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描述 The NEVB-NPS1001 is a two-layer PCB containing the NPS1001 load switch device. The VIN and VOUT connections to the device and the PCB layout routing provides a low-resistance pathway into and out of the device under test. Test point connections allow the EVB user to control the device with userdefined test conditions and make accurate RON measurements
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類型 Evaluation board
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Quick links
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Shop link
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環(huán)境信息
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| NPS1001UP | NPS1001UPZ | NPS1001UP |
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Series
文檔 (3)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| NPS1001 | 0.5 V to 1.8 V, 1.5 A peak, 12 mΩ, load switch | Data sheet | 2024-12-09 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| WLCSP8_SOT8068 | wafer level chip-scale package; 8 bumps; 1.42 × 0.72 × 0.465 mm body | Package information | 2024-01-25 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
No documents available
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
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訂購、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| NPS1001UP | NPS1001UPZ | 935692138336 | Active | 暫無信息 | 8,000 |
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樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.