可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| PESD1ETH1GXLS-Q | PESD1ETH1GXLS-QYL | 934663541315 | SOD882BD | 訂單產(chǎn)品 |
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Click here for more informationPESD1ETH1GXLS-Q
ESD protection for In-vehicle networks
Fully OPEN Alliance IEEE 100BASE-T1 and 1000BASE-T1 compliant ElectroStatic Discharge (ESD) protection device in a small DFN1006BD-2 (SOD882BD) surface-mounted plastic package, designed to protect one automotive in-vehicle network bus line from the damage caused by ESD and other transients.
Features and benefits
Fully OPEN Alliance IEEE 100BASE-T1 and 1000BASE-T1 compliant
High trigger voltage: Vt1 = 100 V min
Low capacitance: Cd < 1.2 pF
ESD protection up to 30 kV (IEC 61000-4-2; ISO10605)
1000 contact discharges (OPEN Alliance specification) with 15 kV (IEC 61000-4-2)
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
ESD protection for In-vehicle network lines in automotive environments
OPEN Alliance IEEE 100/1000BASE-T1 Ethernet
Low-Voltage Differential Signaling (LVDS) automotive
參數(shù)類型
| 型號(hào) | Package version | Package name | Size (mm) | Configuration | Nr of lines | VRWM (V) (V) | Cd [typ] (pF) | IPPM [max] (A) | VESD (kV) (kV) |
|---|---|---|---|---|---|---|---|---|---|
| PESD1ETH1GXLS‑Q | SOD882BD | DFN1006BD-2 | 1 x 0.6 x 0.47 | Bidirectional | 1 | 24 | 0.9 | 2.3 | 30 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PESD1ETH1GXLS‑Q | PESD1ETH1GXLS‑QYL (934663541315) |
Active | HNH |
DFN1006BD‑2 (SOD882BD) |
SOD882BD | SOD882BD_315 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PESD1ETH1GXLS‑Q | PESD1ETH1GXLS‑QYL | PESD1ETH1GXLS-Q |
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文檔 (10)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PESD1ETH1GXLS-Q | ESD protection for In-vehicle networks | Data sheet | 2022-10-05 |
| AN90023 | Thermal performance of DFN packages | Application note | 2020-11-23 |
| AN90023_ZH | Thermal performance of DFN packages | Application note | 2021-02-26 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_asset_document_brochure_autoDFN_CN_LR | 小巧輕便的汽車 二極管和晶體管 | Brochure | 2022-04-26 |
| SOD882BD | 3D model for products with SOD882BD package | Design support | 2023-02-02 |
| Nexperia_AutoDFN_factsheet_2022 | Small & light automotive diodes and transistors | Leaflet | 2022-04-13 |
| SOD882BD | Leadless ultra small plastic package with side-wettable flanks (SWF); 2 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.47 mm body | Package information | 2022-05-20 |
| SOD882BD_315 | DFN1006BD-2; Reel pack for SMD, 7"; Q1/T1-Q2/T3 product orientation | Packing information | 2020-06-18 |
| PESD1ETH1GXLS-Q_Nexperia_Product_Reliability | PESD1ETH1GXLS-Q Nexperia Product Reliability | Quality document | 2025-05-30 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOD882BD | 3D model for products with SOD882BD package | Design support | 2023-02-02 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| PESD1ETH1GXLS‑Q | PESD1ETH1GXLS‑QYL | 934663541315 | Active | SOD882BD_315 | 10,000 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.