可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| PESD5V0F1BRLD-Q | PESD5V0F1BRLD-QYL | 934665474315 | SOD882D | 訂單產(chǎn)品 |
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Femtofarad bidirectional ESD protection diode
Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is encapsulated in a leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
The combination of extremely low capacitance, high ESD maximum rating and ultra small package makes the device ideal for high-speed data line protection and antenna protection applications.
Features and benefits
Bidirectional ESD protection of one line
Femtofarad capacitance: Cd = 400 fF
Low ESD clamping voltage: 30 V at 30 ns and ±8 kV
Very low leakage current: IRM = 1 nA
ESD protection up to 10 kV (contact) and 15 kV (air)
IEC 61000-4-2; level 4 (ESD)
Package height typ. 0.37 mm
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
10/100/1000 Mbit/s Ethernet
High-speed data lines
SIM card protection
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
Audio and video equipment
Antenna protection
參數(shù)類型
| 型號(hào) | Package name | Nr of lines | Configuration | VRWM (V) (V) | Cd [typ] (pF) | VESD IEC61000-4-2 (kV) |
|---|---|---|---|---|---|---|
| PESD5V0F1BRLD‑Q | DFN1006D-2 | 1 | Bidirectional | 5.5 | 0.4 | 10 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PESD5V0F1BRLD‑Q | PESD5V0F1BRLD‑QYL (934665474315) |
Active | H |
DFN1006D‑2 (SOD882D) |
SOD882D | SOD882D_315 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PESD5V0F1BRLD‑Q | PESD5V0F1BRLD‑QYL | PESD5V0F1BRLD-Q |
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文檔 (9)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PESD5V0F1BRLD-Q | Femtofarad bidirectional ESD protection diode | Data sheet | 2022-10-04 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_document_brochure_ESD-Protection-Applications_022017 | ESD Protection Application guide | Brochure | 2018-12-21 |
| SOD882D | 3D model for products with SOD882D package | Design support | 2020-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN1006D-2_SOD882D_mk | plastic, leadless ultra small plastic package; 2 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.4 mm body | Marcom graphics | 2017-01-28 |
| SOD882D | leadless ultra small plastic package with side-wettable flanks (SWF); 2 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.4 mm body | Package information | 2022-05-20 |
| SOD882D_315 | DFN1006D-2; Leadless ultra small plastic package; Reel pack, SMD, 7"; Q1/T1 standard product orientation; Orderable part number ending ,315 or YL; Ordering code (12NC) ending 315 | Packing information | 2020-04-21 |
| PESD5V0F1BRLD-Q_Nexperia_Product_Reliability | PESD5V0F1BRLD-Q Nexperia Product Reliability | Quality document | 2025-05-30 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOD882D | 3D model for products with SOD882D package | Design support | 2020-01-22 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| PESD5V0F1BRLD‑Q | PESD5V0F1BRLD‑QYL | 934665474315 | Active | SOD882D_315 | 10,000 |
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樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.