可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| 74LVC1G386GW-Q100 | 74LVC1G386GW-Q100H | 935691568125 | SOT363-2 | 訂單產(chǎn)品 |
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Click here for more information74LVC1G386GW-Q100
3-input EXCLUSIVE-OR gate
The 74LVC1G386-Q100 is a single 3?-?input EXCLUSIVE?-?OR gate. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.
Schmitt?-?trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.
This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and -40 °C to +125 °C
Wide supply voltage range from 1.65 V to 5.5 V
Overvoltage tolerant inputs to 5.5 V
High noise immunity
CMOS low power dissipation
Direct interface with TTL levels
±24 mA output drive (VCC = 3.0 V)
IOFF circuitry provides partial Power-down mode operation
Latch-up performance exceeds 250 mA
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C (2.7 V to 3.6 V)
JESD36 (4.5 V to 5.5 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
參數(shù)類型
| 型號(hào) | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 74LVC1G386GW‑Q100 | 1.65?-?5.5 | CMOS/LVTTL | ± 32 | 4.5 | 150 | 1 | low | -40~125 | 284 | 56.7 | 172 | TSSOP6 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74LVC1G386GW‑Q100 | 74LVC1G386GW‑Q100H (935691568125) |
Active | YH |
TSSOP6 (SOT363-2) |
SOT363-2 | SOT363-2_125 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74LVC1G386GW‑Q100 | 74LVC1G386GW‑Q100H | 74LVC1G386GW-Q100 |
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Series
文檔 (6)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74LVC1G386_Q100 | 3-input EXCLUSIVE-OR gate | Data sheet | 2023-11-02 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT363-2 | 3D model for products with SOT363-2 package | Design support | 2023-02-02 |
| SOT363-2 | plastic thin shrink small outline package; 6 leads; body width 1.25 mm | Package information | 2022-11-21 |
| SOT363-2_125 | TSSOP6 ; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2022-11-04 |
| 74LVC1G386GW-Q100_Nexperia_Product_Reliability | 74LVC1G386GW-Q100 Nexperia Product Reliability | Quality document | 2025-03-20 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT363-2 | 3D model for products with SOT363-2 package | Design support | 2023-02-02 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| 74LVC1G386GW‑Q100 | 74LVC1G386GW‑Q100H | 935691568125 | Active | SOT363-2_125 | 3,000 |
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樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.