可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| GAN041-650WSB | GAN041-650WSBQ | 934661752127 | SOT429-3 | 訂單產(chǎn)品 |
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Click here for more informationGAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
Features and benefits
Ultra-low reverse recovery charge
Simple gate drive (0 V to +10 V or 12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability
Applications
Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives
參數(shù)類型
| 型號 | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAN041‑650WSB | SOT429-3 | TO-247-3L | Production | cascode | N | 1 | 650 | 41 | 175 | 47.2 | 6.6 | 22 | 187 | 150 | 3.9 | N | 1500 | 147 | 2020-05-14 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| GAN041‑650WSB | GAN041‑650WSBQ (934661752127) |
Active | GAN041 650WSB |
TO‑247‑3L (SOT429-3) |
SOT429-3 | 暫無信息 |
Boards
| Part number | Description | Type | Quick links | Shop link |
|---|---|---|---|---|
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描述 The NX-HB-GAN041UL GAN041-650WSB half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the switching characteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high side & low side logic inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 kW. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used.
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類型 Evaluation board
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Quick links
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Shop link
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Series
文檔 (19)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| GAN041-650WSB | 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package | Data sheet | 2024-06-04 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| AN90030 | Paralleling of Nexperia cascode GaN FETs in half-bridge topology | Application note | 2023-03-22 |
| AN90030_translated | ハーフブリッジ?トポロジーにおけるNexperia製GaN FETの並列 | Application note | 2023-04-03 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| TO-247_SOT429_mk | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Marcom graphics | 2019-02-19 |
| SOT429-3 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Package information | 2023-12-07 |
| GAN041_650WSB | GAN041-650WSB SPICE model | SPICE model | 2021-03-24 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| GaN041-650WSB | GaN041-650WSB Foster thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB_RC_Thermal_Model | GaN041-650WSB RC thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB_cauer | GaN041-650WSB Cauer thermal model | Thermal model | 2021-03-25 |
| UM90010 | NX-HB-GAN041UL 3.5 kW Half-Bridge evaluation board using GAN041-650WSB | User manual | 2023-10-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮書: 功率GaN技術(shù)： 高效功率轉(zhuǎn)換的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| GAN041_650WSB | GAN041-650WSB SPICE model | SPICE model | 2021-03-24 |
| GaN041-650WSB | GaN041-650WSB Foster thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB_RC_Thermal_Model | GaN041-650WSB RC thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB_cauer | GaN041-650WSB Cauer thermal model | Thermal model | 2021-03-25 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| GAN041‑650WSB | GAN041‑650WSBQ | 934661752127 | Active | 暫無信息 | 300 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.