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Click here for more informationPSMN1R1-50SLH
N-channel 50 V, 1.18 mOhm, 280 A logic level MOSFET in LFPAK88 using NextPower-S3 Schottky-Plus technology
280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance industrial applications.
Features and benefits
280 Amp continuous current capability
LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection
Copper-clip and solder die attach for low package inductance and resistance, and high ID(max) rating
Ideal replacement for D2PAK and 10 x 12 mm leadless package types
Qualified to 175 °C
Avalanche rated, 100 % tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage
Narrow VGS(th) rating for easy paralleling and improved current sharing
Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions
Applications
Brushless DC motor control
Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies
Battery protection and Battery Management Systems (BMS)
Load switch
10 cell lithium-ion battery applications (36 V ? 42 V)
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN1R1‑50SLH | SOT1235 | LFPAK88 | End of life | N | 1 | 50 | 1.18 | 175 | 280 | 20 | 86 | 190 | 375 | 1.78 | N | 13338 | 1276 | 2021-01-08 |
封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PSMN1R1‑50SLH | PSMN1R1‑50SLHX (934661301115) |
Obsolete | X1H1L50S |
LFPAK88 (SOT1235) |
SOT1235 | 暫無信息 | |
| PSMN1R1‑50SLHAX (934661301118) |
Obsolete | X1H1L50S | SOT1235_118 |
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PSMN1R1‑50SLH | PSMN1R1‑50SLHX | PSMN1R1‑50SLH |
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| PSMN1R1‑50SLH | PSMN1R1‑50SLHAX | PSMN1R1‑50SLH |
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Series
文檔 (8)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PSMN1R1-50SLH | N-channel 50 V, 1.18 mOhm, 280 A logic level MOSFET in LFPAK88 using NextPower-S3 Schottky-Plus technology | Data sheet | 2021-01-08 |
| AN90003 | LFPAK MOSFET thermal design guide | Application note | 2025-09-30 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT1235 | 3D model for products with SOT1235 package | Design support | 2020-01-22 |
| SOT1235 | 3D model for products with SOT1235 package | Design support | 2020-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK88_sot1235_mk | plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body | Marcom graphics | 2019-04-10 |
| SOT1235 | plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body | Package information | 2022-05-30 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.