種類(lèi)繁多的雙極晶體管助您輕松滿(mǎn)足系統(tǒng)需求。產(chǎn)品線(xiàn)涵蓋基礎(chǔ)雙極晶體管模塊，以及一系列節(jié)省空間和成本的帶電阻晶體管，直至我們突破性的小信號(hào)系列低壓降電壓器件。
我們豐富的二極管產(chǎn)品組合為您提供當(dāng)今市場(chǎng)所需的靈活性——無(wú)論是簡(jiǎn)單的齊納二極管、高效的肖特基整流器、快速恢復(fù)二極管還是可控雪崩開(kāi)關(guān)二極管。
涵蓋靜電放電保護(hù)、瞬態(tài)電壓抑制器件、共模扼流圈及電磁干擾濾波器，Nexperia的保護(hù)技術(shù)持續(xù)升級(jí)，在業(yè)界最小封裝中提供最高級(jí)別的防護(hù)。
Nexperia提供種類(lèi)豐富的低/中壓（12-200 V）P溝道和N溝道硅MOSFET產(chǎn)品組合，采用多種節(jié)省空間且高效的封裝方案。
Nexperia的1200V碳化硅（SiC）MOSFET重新定義了安全、穩(wěn)健且可靠的電源開(kāi)關(guān)標(biāo)準(zhǔn)，成為電動(dòng)汽車(chē)充電基礎(chǔ)設(shè)施、光伏逆變器及電機(jī)驅(qū)動(dòng)領(lǐng)域的首選產(chǎn)品。
針對(duì)各類(lèi)高壓（650 V）和低壓（40-150 V）應(yīng)用場(chǎng)景，Nexperia氮化鎵場(chǎng)效應(yīng)晶體管憑借更低的導(dǎo)通損耗與開(kāi)關(guān)損耗，實(shí)現(xiàn)了最快速的過(guò)渡/開(kāi)關(guān)能力、最佳的功率效率以及更高的功率密度。
為滿(mǎn)足高效高壓電源轉(zhuǎn)換和電機(jī)驅(qū)動(dòng)日益增長(zhǎng)的需求，Nexperia的IGBT采用堅(jiān)固且經(jīng)濟(jì)高效的載流子存儲(chǔ)溝槽柵極（CSTBT）先進(jìn)場(chǎng)截止（FS）結(jié)構(gòu)。
除全面的邏輯功能、模擬開(kāi)關(guān)和I2C接口產(chǎn)品組合外，Nexperia還提供日益豐富的功率IC產(chǎn)品線(xiàn)，助力打造創(chuàng)新解決方案，專(zhuān)注于降低客戶(hù)物料清單成本，提升系統(tǒng)效率與可靠性。
為助力實(shí)現(xiàn)互聯(lián)電動(dòng)及混合動(dòng)力車(chē)輛，Nexperia半導(dǎo)體提供全系列符合AEC-Q100/Q101認(rèn)證的器件，涵蓋我們完整的產(chǎn)品組合，這些產(chǎn)品兼具高效能與高效設(shè)計(jì)特性。
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more information30 V, N-channel Trench MOSFET
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic-level compatible
Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
Exposed drain pad for excellent thermal conduction
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
DC to DC conversion
Battery management
Low-side load switch
Switching circuits
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | VGSth @25 C [min] (V) | VGSth [typ] (V) | VGSth [max] @25 C (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMPB07R3EN | SOT1220-2 | DFN2020M-6 | Production | N | 1 | 30 | 20 | 8.6 | 12 | 150 | 17 | 1.6 | 13 | 1.9 | 1.2 | 1.7 | 2.2 | N | 914 | 309 | 2020-11-27 |
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PMPB07R3EN | PMPB07R3ENX (934662428115) |
Active | ZQ |
DFN2020M‑6 (SOT1220-2) |
SOT1220-2 | SOT1220-2_115 | |
| PMPB07R3ENH (934662428125) |
Active | ZQ | SOT1220-2_125 | ||||
| PMPB07R3ENAX (934662428184) |
Active | ZQ | 暫無(wú)信息 |
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PMPB07R3EN | PMPB07R3ENX | PMPB07R3EN |
|
|
| PMPB07R3EN | PMPB07R3ENH | PMPB07R3EN |
|
|
| PMPB07R3EN | PMPB07R3ENAX | PMPB07R3EN |
|
|
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| PMPB07R3EN | 30 V, N-channel Trench MOSFET | Data sheet | 2023-08-18 |
| AN11119 | Medium power small-signal MOSFETs in DC-to-DC conversion | Application note | 2013-05-07 |
| AN90017 | Load switches for mobile and computing applications | Application note | 2020-09-02 |
| AN90023 | Thermal performance of DFN packages | Application note | 2020-11-23 |
| AN90059 | Power MOSFET gate driver fundamentals | Application note | 2025-09-10 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT1220-2 | 3D model for products with SOT1220-2 package | Design support | 2023-02-02 |
| nexperia_document_leaflet_SsMOS_for_mobile_2022-CHN | 適合移動(dòng)和便攜式設(shè)備的 大批量小信號(hào)MOSFET， 采用WLCSP和無(wú)引腳DFN封裝 | Leaflet | 2022-07-04 |
| nexperia_document_leaflet_SsMOS_for_mobile_2022 | High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages | Leaflet | 2022-07-04 |
| SOT1220-2 | plastic thermal enhanced ultra thin small outline package; no leads;6 terminals; body 2 x 2 x 0.65 mm | Package information | 2020-06-17 |
| SOT1220-2_115 | DFN2020M-6; Reel pack for SMD, 7''; Q2/T3 product orientation | Packing information | 2021-06-10 |
| SOT1220-2_125 | DFN2020M-6; Reel pack for SMD, 7''; Q3/T4 product orientation | Packing information | 2023-04-25 |
| PMPB07R3EN | PMPB07R3EN SPICE model | SPICE model | 2021-02-04 |
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| PMPB07R3EN | PMPB07R3EN SPICE model | SPICE model | 2021-02-04 |
| SOT1220-2 | 3D model for products with SOT1220-2 package | Design support | 2023-02-02 |
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線(xiàn)購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| PMPB07R3EN | PMPB07R3ENX | 934662428115 | Active | SOT1220-2_115 | 3,000 |
|
| PMPB07R3EN | PMPB07R3ENH | 934662428125 | Active | SOT1220-2_125 | 3,000 |
|
| PMPB07R3EN | PMPB07R3ENAX | 934662428184 | Active | 暫無(wú)信息 | 3,000 |
|
作為 Nexperia 的客戶(hù)，您可以通過(guò)我們的銷(xiāo)售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶(hù)，我們的全球和地區(qū)分銷(xiāo)商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷(xiāo)商列表。
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.