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Click here for more information74HC11DB
Triple 3-input AND gate
The 74HC11; 74HCT11 is a triple 3-input AND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.
Alternatives
Features and benefits
Wide supply voltage range from 2.0 to 6.0 V
CMOS low power dissipation
High noise immunity
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
Input levels:
For 74HC11: CMOS level
For 74HCT11: TTL level
Complies with JEDEC standards:
JESD8C (2.7 V to 3.6 V)
JESD7A (2.0 V to 6.0 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
PCB Symbol, Footprint and 3D Model
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封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74HC11DB | 74HC11DB,112 (935173790112) |
Obsolete | no package information | ||||
| 74HC11DB,118 (935173790118) |
Obsolete | ||||||
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74HC11DB | 74HC11DB,112 | 74HC11DB |
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| 74HC11DB | 74HC11DB,118 | 74HC11DB |
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Series
文檔 (3)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74HC_HCT11 | Triple 3-input AND gate | Data sheet | 2024-02-21 |
| AN11044 | Pin FMEA 74HC/74HCT family | Application note | 2019-01-09 |
| HCT_USER_GUIDE | HC/T User Guide | User manual | 1997-10-31 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
No documents available
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.