可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| BZX8850S-C9V1-Q | BZX8850S-C9V1-QYL | 934663400315 | SOD882BD | 訂單產(chǎn)品 |
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Click here for more informationBZX8850S-C9V1-Q
Low-current voltage regulator diodes
Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.
Features and benefits
Total power dissipation: ≤ 365 mW
Two tolerance series: ± 2 % and approximately ± 5 %
Working voltage range: nominal 1.8 V to 51 V
Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications
BZX8850S-B11-Q to -C51-Q: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
Low-current general regulation functions
參數(shù)類(lèi)型
| 型號(hào) | Package version | Package name | Size (mm) | VZ [nom] (V) | IZ (mA) | Tolerance +/- | VZ [max] (V) | IF [max] (mA) | VZ [min] (V) | Ptot (mW) | PZSM (W) | TJ [max] (°C) | Configuration | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BZX8850S‑C9V1‑Q | SOD882BD | DFN1006BD-2 | 1 x 0.6 x 0.47 | 9.1 | 0.05 | appr. 5% | 9.56 | 200 | 8.65 | 360 | 40 | 150 | single | Y |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BZX8850S‑C9V1‑Q | BZX8850S‑C9V1‑QYL (934663400315) |
Active | 7F |
DFN1006BD‑2 (SOD882BD) |
SOD882BD | SOD882BD_315 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BZX8850S‑C9V1‑Q | BZX8850S‑C9V1‑QYL | BZX8850S-C9V1-Q |
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文檔 (11)
| 文件名稱 | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| BZX8850S-Q_SER | Low-current voltage regulator diodes | Data sheet | 2025-10-10 |
| AN90023 | Thermal performance of DFN packages | Application note | 2020-11-23 |
| AN90023_ZH | Thermal performance of DFN packages | Application note | 2021-02-26 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_asset_document_brochure_autoDFN_CN_LR | 小巧輕便的汽車(chē) 二極管和晶體管 | Brochure | 2022-04-26 |
| SOD882BD | 3D model for products with SOD882BD package | Design support | 2023-02-02 |
| Nexperia_AutoDFN_factsheet_2022 | Small & light automotive diodes and transistors | Leaflet | 2022-04-13 |
| SOD882BD | Leadless ultra small plastic package with side-wettable flanks (SWF); 2 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.47 mm body | Package information | 2022-05-20 |
| SOD882BD_315 | DFN1006BD-2; Reel pack for SMD, 7"; Q1/T1-Q2/T3 product orientation | Packing information | 2020-06-18 |
| BZX8850S-C9V1-Q_Nexperia_Product_Reliability | BZX8850S-C9V1-Q Nexperia Product Reliability | Quality document | 2025-05-30 |
| BZX8850S-C9V1-Q | BZX8850S-C9V1-Q SPICE model | SPICE model | 2025-10-11 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| BZX8850S-C9V1-Q | BZX8850S-C9V1-Q SPICE model | SPICE model | 2025-10-11 |
| SOD882BD | 3D model for products with SOD882BD package | Design support | 2023-02-02 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| BZX8850S‑C9V1‑Q | BZX8850S‑C9V1‑QYL | 934663400315 | Active | SOD882BD_315 | 10,000 |
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樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.