可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| BUK7Y2R5-40H | BUK7Y2R5-40HX | 934660084115 | SOT669 | 訂單產(chǎn)品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationBUK7Y2R5-40H
N-channel 40 V, 2.5 mΩ standard level MOSFET in LFPAK56
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.
Features and benefits
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Fully automotive qualified to AEC-Q101:
175 °C rating suitable for thermally demanding environments
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Trench 9 Superjunction technology:
Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in same footprint
Improved SOA and avalanche capability compared to standard TrenchMOS
Tight VGS(th) limits enable easy paralleling of MOSFETs
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LFPAK Gull Wing leads:
High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joint
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LFPAK copper clip technology:
Improved reliability, with reduced Rth and RDSon
Increases maximum current capability and improved current spreading
Applications
12 V automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK7Y2R5‑40H | SOT669 | LFPAK56; Power-SO8 | Production | N | 1 | 40 | 2.5 | 175 | 120 | 8.9 | 45.8 | 190 | 22.7 | 3 | Y | 3193 | 831 | 2017-07-04 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BUK7Y2R5‑40H | BUK7Y2R5‑40HX (934660084115) |
Active | 72H540 |
LFPAK56; Power‑SO8 (SOT669) |
SOT669 |
WAVE_BG-BD-1
|
SOT669_115 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BUK7Y2R5‑40H | BUK7Y2R5‑40HX | BUK7Y2R5-40H |
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Series
文檔 (22)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK7Y2R5-40H | N-channel 40 V, 2.5 mΩ standard level MOSFET in LFPAK56 | Data sheet | 2025-01-10 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2025-09-10 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2025-10-21 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-10-21 |
| AN11160 | Designing RC Snubbers | Application note | 2025-09-10 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-09-08 |
| AN11261 | RC Thermal Models | Application note | 2025-09-10 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2025-09-08 |
| AN90059 | Power MOSFET gate driver fundamentals | Application note | 2025-09-10 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT669 | SOT669 PCB Footprint in KiCad Format | Design support | 2025-12-08 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK56_POWER-SO8_SOT669_mk | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| BUK7xxxx-40H_LTspice_V3 | BUK7xxxx-40H Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2022-09-26 |
| SOT669 | plastic, single-ended surface-mounted package; 4 terminals | Package information | 2025-03-20 |
| SOT669_115 | LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2022-05-10 |
| BUK7Y2R5-40H | BUK7Y2R5-40H | SPICE model | 2017-08-11 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2025-09-10 |
| BUK7Y2R5-40H_RCthermal | BUK7Y2R5-40H_RCthermal | Thermal design | 2017-08-11 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK7xxxx-40H_LTspice_V3 | BUK7xxxx-40H Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2022-09-26 |
| BUK7Y2R5-40H | BUK7Y2R5-40H | SPICE model | 2017-08-11 |
| BUK7Y2R5-40H_RCthermal | BUK7Y2R5-40H_RCthermal | Thermal design | 2017-08-11 |
| SOT669 | SOT669 PCB Footprint in KiCad Format | Design support | 2025-12-08 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| BUK7Y2R5‑40H | BUK7Y2R5‑40HX | 934660084115 | Active | SOT669_115 | 1,500 |
|
樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.