Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more information74AXP1G14GN
Low-power Schmitt trigger inverter
The 74AXP1G14 is a single inverter with Schmitt trigger input. It transforms slowly changing input signals into sharply defined, jitter-free output signals.
This device ensures very low static and dynamic power consumption across the entire VCC range from 0.7 V to 2.75 V. It is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.
Features and benefits
Wide supply voltage range from 0.7 V to 2.75 V
Low input capacitance; CI = 0.5 pF (typical)
Low output capacitance; CO = 1.0 pF (typical)
Low dynamic power consumption; CPD = 2.4 pF at VCC = 1.2 V (typical)
Low static power consumption; ICC = 0.6 μA (85 °C maximum)
High noise immunity
Complies with JEDEC standard:
JESD8-12A.01 (1.1 V to 1.3 V)
JESD8-11A.01 (1.4 V to 1.6 V)
JESD8-7A (1.65 V to 1.95 V)
JESD8-5A.01 (2.3 V to 2.7 V)
ESD protection:
HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV
CDM JESD22-C101E exceeds 1000 V
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 2.75 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
Multiple package options
Specified from -40 °C to +85 °C
參數(shù)類(lèi)型
| 型號(hào) | Logic switching levels | Output drive capability (mA) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|
| 74AXP1G14GN | CMOS | ± 4.5 | 70 | 1 | ultra low | -40~85 | 366 | 226 | XSON6 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74AXP1G14GN | 74AXP1G14GNH (935304074125) |
Withdrawn / End-of-life |
XSON6 (SOT1115) |
SOT1115 | 暫無(wú)信息 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74AXP1G14GN | 74AXP1G14GNH | 74AXP1G14GN |
|
|
Series
文檔 (11)
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| 74AXP1G14 | Low-power Schmitt trigger inverter | Data sheet | 2021-09-30 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_document_guide_MiniLogic_MicroPak_201808 | MicroPak leadless logic portfolio guide | Brochure | 2018-09-03 |
| SOT1115 | 3D model for products with SOT1115 package | Design support | 2023-02-02 |
| axp1g14 | 74AXP1G14 IBIS model | IBIS model | 2014-10-22 |
| Nexperia_document_leaflet_Logic_AXP_technology_portfolio_201904 | AXP – Extremely low-power logic technology portfolio | Leaflet | 2019-04-05 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| XSON6_SOT1115_mk | plastic, extremely thin small outline package; 6 terminals; 0.55 mm pitch; 0.9 mm x 1 mm x 0.35 mm body | Marcom graphics | 2017-01-28 |
| SOT1115 | plastic, leadless extremely thin small outline package; 6 terminals; 0.3 mm pitch; 0.9 mm x 1 mm x 0.35 mm body | Package information | 2022-05-27 |
| 74AXP1G14GN_Nexperia_Product_Reliability | 74AXP1G14GN Nexperia Product Reliability | Quality document | 2025-03-20 |
| MAR_SOT1115 | MAR_SOT1115 Topmark | Top marking | 2013-06-03 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.