可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| 74VHCT08D | 74VHCT08D,118 | 935289502118 | SOT108-1 | 訂單產(chǎn)品 |
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Click here for more information74VHCT08D
Quad 2-input AND gate
The 74VHC08; 74VHCT08 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard JESD7?-?A.
The 74VHC08; 74VHCT08 provide the quad 2-input AND function.
Alternatives
Features and benefits
Balanced propagation delays
All inputs have a Schmitt-trigger action
Inputs accepts voltages higher than VCC
Input levels:
The 74VHC08 operates with CMOS logic levels
The 74VHCT08 operates with TTL logic levels
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
參數(shù)類(lèi)型
| 型號(hào) | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 74VHCT08D | 4.5?-?5.5 | TTL | ± 8 | 5.0 | 60 | 4 | low | -40~125 | 105 | 17.8 | 63 | SO14 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
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封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74VHCT08D | 74VHCT08D,118 (935289502118) |
Active | 74VHCT08D |
SO14 (SOT108-1) |
SOT108-1 |
SO-SOJ-REFLOW
SO-SOJ-WAVE WAVE_BG-BD-1 |
SOT108-1_118 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74VHCT08D | 74VHCT08D,118 | 74VHCT08D |
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Series
文檔 (12)
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| 74VHC_VHCT08 | Quad 2-input AND gate | Data sheet | 2024-04-22 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT108-1 | 3D model for products with SOT108-1 package | Design support | 2020-01-22 |
| 74vhct08 | 74vhct08 IBIS model | IBIS model | 2013-04-08 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SO14_SOT108-1_mk | plastic, small outline package; 14 leads; 1.27 mm pitch; 8.65 mm x 3.9 mm x 1.75 mm body | Marcom graphics | 2017-01-28 |
| SOT108-1 | plastic, small outline package; 14 leads; 1.27 mm pitch; 8.65 mm x 3.9 mm x 1.75 mm body | Package information | 2023-11-07 |
| SOT108-1_118 | SO14; Reel pack for SMD, 13"; Q1/T1 product orientation | Packing information | 2024-02-19 |
| 74VHCT08D_Nexperia_Product_Reliability | 74VHCT08D Nexperia Product Reliability | Quality document | 2025-03-20 |
| SO-SOJ-REFLOW | Footprint for reflow soldering | Reflow soldering | 2009-10-08 |
| SO-SOJ-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
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訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| 74VHCT08D | 74VHCT08D,118 | 935289502118 | Active | SOT108-1_118 | 2,500 |
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樣品
作為 Nexperia 的客戶(hù)，您可以通過(guò)我們的銷(xiāo)售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶(hù)，我們的全球和地區(qū)分銷(xiāo)商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷(xiāo)商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.