Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more information74LV02BQ
Quad 2-input NOR gate
The 74LV02 is a low-voltage Si-gate CMOS device that is pin and function compatible with 74HC02 and 74HCT02.
The 74LV02 provides a quad 2-input NOR function.
Features and benefits
Wide operating voltage: 1.0 V to 5.5 V
Optimized for low voltage applications: 1.0 V to 3.6 V
Accepts TTL input levels between VCC = 2.7 V and VCC = 3.6 V
Typical output ground bounce < 0.8 V at VCC = 3.3 V and Tamb = 25 °C
Typical HIGH-level output voltage (VOH) undershoot: > 2 V at VCC = 3.3 V and Tamb = 25 °C
ESD protection:
HBM JESD22-A114E exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Multiple package options
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Applications
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
|
|
封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74LV02BQ | 74LV02BQ,115 (935285564115) |
Obsolete | no package information | ||||
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74LV02BQ | 74LV02BQ,115 | 74LV02BQ |
|
|
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| lv02 | 74LV02 IBIS model | IBIS model | 2019-01-09 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
|
|
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.