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Click here for more informationBUK6C2R1-55C
N-channel TrenchMOS intermediate level FET
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance automotive applications.
Features and benefits
- AEC Q101 compliant
- High current handling capability, up to 320 A
- Low conduction losses due to very low on-state resistance
- Suitable for standard and logic level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
Applications
- 12 V automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoids
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK6C2R1‑55C | SOT427 | D2PAK-7 | End of life | N | 1 | 55 | 2.3 | 3.1 | 3.7 | 175 | 228 | 79 | 253 | 300 | 115 | 2.3 | Y | 12000 | 1075 | 2011-11-22 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BUK6C2R1‑55C | BUK6C2R1‑55C,118 (934065131118) |
Obsolete | BUK6C2R1 55C |
D2PAK‑7 (SOT427) |
SOT427 | SOT427_118 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BUK6C2R1‑55C | BUK6C2R1‑55C,118 | BUK6C2R1‑55C |
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Series
文檔 (17)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK6C2R1-55C | N-channel TrenchMOS intermediate level FET | Data sheet | 2017-04-20 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2025-09-10 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2025-10-21 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-10-21 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11160 | Designing RC Snubbers | Application note | 2025-09-10 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-09-08 |
| AN11261 | RC Thermal Models | Application note | 2025-09-10 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT427 | plastic, single-ended surface-mounted package (D2PAK-7); 7 leads; 1.27 mm pitch; 11 mm x 10 mm x 4.3 mm body | Package information | 2020-04-21 |
| BUK6C2R1-55C | BUK6C2R1-55C Spice model | SPICE model | 2012-04-12 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2025-09-10 |
| BUK6C2R1-55C | BUK6C2R1-55C Thermal model | Thermal model | 2012-01-20 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.