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Click here for more informationBUK9Y12-55B
N-channel TrenchMOS logic level FET
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Features and benefits
- Low conduction losses due to low on-state resistance
- Q101 compliant
- Suitable for logic level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
Applications
- 12 V and 24 V loads
- Advanced braking systems (ABS)
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK9Y12‑55B | SOT669 | LFPAK56; Power-SO8 | End of life | N | 1 | 55 | 11 | 12 | 13 | 175 | 61.8 | 13 | 106 | 83 | 1.65 | Y | 2160 | 315 | 2011-01-27 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BUK9Y12‑55B | BUK9Y12‑55B,115 (934063309115) |
Obsolete | 91255B |
LFPAK56; Power‑SO8 (SOT669) |
SOT669 |
WAVE_BG-BD-1
|
SOT669_115 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BUK9Y12‑55B | BUK9Y12‑55B,115 | BUK9Y12‑55B |
|
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Series
文檔 (21)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK9Y12-55B | N-channel TrenchMOS logic level FET | Data sheet | 2017-05-04 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2025-09-10 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2025-10-21 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-10-21 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11160 | Designing RC Snubbers | Application note | 2025-09-10 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-09-08 |
| AN11261 | RC Thermal Models | Application note | 2025-09-10 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK56_POWER-SO8_SOT669_mk | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT669 | plastic, single-ended surface-mounted package; 4 terminals | Package information | 2025-03-20 |
| BUK9Y12_55B | BUK9Y12-55B SPICE model | SPICE model | 2012-04-12 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2025-09-10 |
| BUK9Y12-55B_RC_Thermal_Model | BUK9Y12-55B Thermal design model | Thermal design | 2021-01-18 |
| BUK9Y12-55B | BUK9Y12-55B Thermal model | Thermal model | 2009-06-22 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK9Y12_55B | BUK9Y12-55B SPICE model | SPICE model | 2012-04-12 |
| BUK9Y12-55B_RC_Thermal_Model | BUK9Y12-55B Thermal design model | Thermal design | 2021-01-18 |
| BUK9Y12-55B | BUK9Y12-55B Thermal model | Thermal model | 2009-06-22 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.