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涵蓋靜電放電保護(hù)、瞬態(tài)電壓抑制器件、共模扼流圈及電磁干擾濾波器，Nexperia的保護(hù)技術(shù)持續(xù)升級(jí)，在業(yè)界最小封裝中提供最高級(jí)別的防護(hù)。
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Click here for more information650 V, 75 A trench field-stop IGBT with full rated silicon diode
The NGW75T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
Device current is rated at 75 A
Low conduction and switching losses
Stable and tight parameters for easy parallel operation
Maximum junction temperature 175 °C
Fully rated and soft fast reverse recovery diode
5 μs short circuit withstand time
HV-H3TRB qualified
Motor drives for industrial and consumer appliances
Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc.
Power inverters
Uninterruptible Power Supply (UPS) inverter
EV charging converter
Induction heating
Welding
| 型號(hào) | Product status | VCE [max] (V) | IC [typ] (A) | Configuration | tsc [max] (μs) | Tj [min] (°C) | Tj [max] (°C) | Package version | Package name |
|---|---|---|---|---|---|---|---|---|---|
| NGW75T65M3DFP | Production | 650 | 75 | MS | 5 | -40 | 175 | SOT429-5 | TO-247-3 |
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| NGW75T65M3DFP | NGW75T65M3DFPQ (934668963127) |
Active | W75T65M3DFP |
TO‑247‑3 (SOT429-5) |
SOT429-5 | 暫無(wú)信息 | |
| NGW75T65M3DFP/A00Z (934671642347) |
Samples available / Development | W75T65M3DFP | 暫無(wú)信息 | ||||
| NGW75T65M3DFPZ (934668963347) |
Development | W75T65M3DFP | 暫無(wú)信息 |
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| NGW75T65M3DFP | NGW75T65M3DFPQ | NGW75T65M3DFP |
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| NGW75T65M3DFP | NGW75T65M3DFP/A00Z | NGW75T65M3DFP |
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| NGW75T65M3DFP | NGW75T65M3DFPZ | NGW75T65M3DFP |
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| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| NGW75T65M3DFP | 650 V, 75 A trench field-stop IGBT with full rated silicon diode | Data sheet | 2025-01-17 |
| AN90042 | Nexperia 650 V (G3) IGBT product introduction | Application note | 2025-08-06 |
| SOT429-5 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3 | Package information | 2025-11-03 |
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
No documents available
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| NGW75T65M3DFP | NGW75T65M3DFPQ | 934668963127 | Active | 暫無(wú)信息 | 450 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.